Device for depositing a layer on a semiconductor wafer by means of vapour deposition
View Patent ↗Uniformity of vapor deposited coatings on semiconductor wafers is improved by employing an apparatus having a gas distributor head below a susceptor onto which the wafer is placed, the gas distributor head directing a fan of cooling gas at the rear side of the susceptor. The ratio of the diameter of the cooled section of the susceptor to the diameter D of the wafer is preferably from 0.1 to 0.4.
1. An apparatus for depositing a layer on a semiconductor wafer by means of vapor deposition, comprising
a susceptor having a front side facing a semiconductor wafer to be coated, and a rear side;
a shaft for rotating the susceptor, the shaft having an upper end and a lower end, and a channel extending from the lower to the upper end;
a gas distributor head fixed to an upper end of the shaft,
a line for feeding a cooling gas from a cooling gas source to the lower end of the shaft, from where the cooling gas passes through the channel to the upper end of the shaft and into the distributor head and is directed to the rear side of the susceptor, thereby cooling a region of the rear side of the susceptor by means of the cooling gas, wherein the cooled region extends from the center of the susceptor radially outward, wherein the gas distributor head is embodied such that a ratio d/D is not less than 0.1 and not more than 0.4, wherein d denotes the diameter of the cooled region of the rear side of the susceptor and D denotes the diameter of the semiconductor wafer.
2. The apparatus of claim 1 , further comprising a device which controls or limits a volumetric flow rate of the cooling gas that leaves the gas distributor head to between 1 slm and 20 slm.
3. In a method for vapor deposition coating a semiconductor wafer placed on a susceptor in a heated reaction chamber, the improvement comprising employing the apparatus of claim 1 .
4. In a method for vapor deposition coating a semiconductor wafer placed on a susceptor in a heated reaction chamber, the improvement comprising employing the apparatus of claim 2 .
5. The method of claim 3 , where the thickness uniformity of a vapor deposited coating on the semiconductor wafer is greater than when cooling of a central area of the rear side of the susceptor is dispensed with.
6. The apparatus of claim 1 , wherein the gas distributor head is in the form of a conically extended body of revolution.