Method for the double-side polishing of a semiconductor wafer
View Patent ↗A method of simultaneous double-side polishing of at least one semiconductor material wafer includes disposing each wafer in a respective suitably dimensioned cutout in a carrier plate having a front and rear side. The at least one wafer is polished between an upper polishing plate covered with a first polishing pad and a lower polishing plate covered with a second polishing pad while supplying a polishing agent. The polishing agent is supplied on the front and rear side of the wafer through openings in the upper and lower polishing pads and the upper and lower polishing plates. Each polishing pad has an inner circular region and outer ring shaped region where the quantity of polishing agent emerging from openings in the working gap per unit time in the inner circular region of the polishing pad is different from the quantity that emerges from openings in the outer ring-shaped region.
1. A method of simultaneous double-side polishing of at least one wafer composed of semiconductor material, the method comprising:
disposing each wafer in a respective suitably dimensioned cutout in a carrier plate having a front side and a rear side, wherein each wafer can be configured to rotate within each suitability dimensioned cutout and wherein each suitably dimensioned cutout in the carrier plate is surrounded by at least one segmented cutout at a distance A from the dimensioned cutout; and
polishing the at least one wafer between an upper polishing plate covered with a first polishing pad and a lower polishing plate covered with a second polishing pad while supplying a polishing agent, wherein the polishing agent is supplied on a front side and a rear side of the semiconductor wafer in a pressurized manner, through openings present in the upper and the lower polishing pad and through openings present in the upper and in the lower polishing plate;
wherein each polishing pad has an inner circular region and an outer edge region formed by a ring-shape area where the quantity of the polishing agent emerging from the openings into a working gap per unit time in the inner circular region of each polishing pad is different from a quantity that emerges in the same time from the openings situated in the outer ring-shaped region.
2. The method as recited in claim 1 , wherein each suitably dimensioned circular cutout in the carrier plate is surrounded by three segmented cutouts, each having an identical size and being separated from one another by webs, with a distance among one another of in each case at most 110°, in a ring-shaped manner at distance A from the circular cutout.
3. The method as recited in claim 1 , wherein a rotation of each semiconductor wafer within the respective suitably dimensioned cutout in the carrier plate is prevented by the semiconductor wafer being fixed in the cutout.
4. The method as recited in claim 1 , wherein an orientation of openings of the nozzles integrated in the polishing plate for the polishing agent supply or openings in the polishing pad, relative to the polishing pad surface, lie in an angular range of from 45° to 90°.
5. The method as recited in claim 1 , wherein the quantity of the polishing agent emerging from the openings into the working gap per unit time in the inner circular region of the polishing pad is higher than a quantity that emerges in the same time from the openings situated in the outer ring-shaped region.
6. The method as recited in claim 1 , wherein a front side of the at least one wafer is polished at the upper polishing pad.