Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material. The method includes: providing the semiconductor wafer; arranging the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer; conducting a deposition gas over the front side of the semiconductor wafer; and selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer, as a result of which first partial regions at an edge of the semiconductor wafer, in the first partial regions a growth rate of the epitaxial layer is greater than in adjacent second partial regions given uniform temperature of the semiconductor wafer owing to an orientation of the monocrystalline material, are heated more weakly.
1. A method for depositing an epitaxial layer on a front side of a semiconductor wafer comprising monocrystalline material, the method comprising:
providing the semiconductor wafer;
arranging the semiconductor wafer on a susceptor;
heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer;
conducting a deposition gas over the front side of the semiconductor wafer; and
selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer such that first partial regions at an edge of the semiconductor wafer are heated with the reduced intensity as compared to adjacent second partial regions, wherein the first partial regions have a characteristic greater growth rate of the epitaxial layer as compared to the adjacent second partial regions under a uniform temperature of the semiconductor wafer as a result of an orientation of the monocrystalline material, and
wherein a ring that is held by susceptor carrying arms is arranged below the susceptor, the ring having inwardly facing projections, the projections each comprising a web and a ring segment, wherein the ring segment consists of a material having a low transmittance in an infrared (IR) range of the spectrum and has a width in a circumferential direction which, expressed as an aperture angle α, is not less than 15° and not more than 25°.
2. An apparatus for depositing an epitaxial layer on a front side of a semiconductor wafer comprising monocrystalline material, the apparatus comprising:
a susceptor;
a device for holding and rotating the susceptor having a susceptor carrying shaft and susceptor carrying arms; and
a ring that is held by the susceptor carrying arms and has inwardly facing projections that are configured to selectively reduce an intensity of thermal radiation passing through them such that first partial regions at an edge of the semiconductor wafer placed on the susceptor are heated with the reduced intensity as compared to adjacent second partial regions, wherein the first partial regions have a characteristic greater growth rate of the epitaxial layer as compared to the adjacent second partial regions under a uniform temperature of the semiconductor wafer as a result of an orientation of the monocrystalline material, and
wherein the projections each comprise a web and a ring segment, and the ring segment consists of a material having a low transmittance in the infrared (IR) range of the spectrum and has a width in a circumferential direction which, expressed as an aperture angle α, is not less than 15° and not more than 25°.
3. The apparatus as claimed in claim 2 , wherein the ring consists of quartz glass.
4. The apparatus as claimed in claim 2 , comprising four projections having a distance to an adjacent projection of 90°.
5. The apparatus as claimed in claim 2 , comprising two projections having a distance to an adjacent projection of 180°.