Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer

1. A method for depositing a layer on a semiconductor wafer having an outer edge and having an orientation notch, comprising:

a) placing the wafer on a susceptor during the deposition of a layer on a front side of the semiconductor wafer, the susceptor comprising:

a)i) a placement surface for receiving the semiconductor wafer in an edge region of a rear side of the semiconductor wafer, the placement surface having an inner diameter which is smaller than the diameter of the wafer;

a)ii) an upwardly stepped outer delimitation of the placement surface forming a circular wafer-receiving pocket;

a)iii) a radially inward protrusion of the upwardly stepped outer delimitation of the placement surface around which the orientation notch of a wafer is to be placed, configured such that the protrusion is in a spaced relationship with the wafer orientation notch; and

a)iv) a radially inward protrusion of the placement surface in a region of the radially inward protrusion of the upwardly stepped outer delimitation of the placement surface, wherein the wafer is placed onto the susceptor such that a partial region of the edge region of the rear side of the semiconductor wafer in which the orientation notch is located is on the radially inward protrusion of the placement surface;

b) supplying a process gas to the front side of the semiconductor wafer while rotating the susceptor; and

c) depositing the layer on the front side of the semiconductor wafer,

wherein the upwardly stepped outer delimitation surface of the susceptor and the radially inward protrusion thereof are configured to receive a semiconductor wafer having an orientation notch so as to provide a uniform distance between all portions of the wafer including its orientation notch and the upwardly stepped outer delimitation of the placement surface.

2. The method of claim 1 , wherein a top surface of the susceptor which extends radially outward from the upwardly stepped outer delimitation of the placement surface, is uniformly flat.

3. The method of claim 1 , wherein an epitaxial layer is deposited on the front side of the semiconductor wafer.

4. The method of claim 1 , wherein an epitaxial layer comprising silicon is deposited on a monocrystalline semiconductor wafer comprising silicon, the thickness of the epitaxial layer being not less than 1.5 μm and not greater than 5 μm.

5. The method of claim 1 , wherein the placement surface is arranged horizontally.

6. The method of claim 1 , wherein the placement surface is not horizontal, but is arranged sloping inward, with an angle of inclination not greater than 3°.

7. The method of claim 1 , wherein the radially inward protrusion of the placement surface extends at least as far radially inward as the orientation notch of the wafer after placement of the semiconductor wafer onto the susceptor.

8. The method of claim 1 , wherein the susceptor has a single radially inward protrusion of the upwardly stepped delimitation of the placement surface and a single radially inward protrusion of the placement surface in the region of the radially inward protrusion of the upwardly stepped outer delimitation of the placement surface.

9. The method of claim 1 , wherein the susceptor has a bottom plate below the wafer, the bottom plate containing micropores.

10. The method of claim 6 , wherein the sloped placement surface has a curved profile.