Method and an apparatus for growing a silicon single crystal from a melt
View Patent ↗Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.
1. An apparatus for growing a silicon single crystal from a melt, comprising:
a crucible for holding the melt;
a magnetic system imposing a horizontal magnetic field on the melt, the magnetic field having a magnetic induction B at a field center C;
a heat shield surrounding the silicon single crystal, the heat shield having a lower end which is connected to a bottom cover of the heat shield facing a free surface of the melt and having a non-axisymmetric shape with respect to a center axis M of the crucible, the shape of the bottom cover forcing a gas which is directed between the silicon single crystal and the heat shield to the free surface of the melt to flow over a region of the free surface of the melt in a direction substantially perpendicular to the magnetic induction B, wherein the bottom cover comprises a ring section which is surrounded by a brim section and a collar section, the brim section and the collar section forming a channel which has an opening for directing the gas over the region of the free surface of the melt.
2. The apparatus of claim 1 , wherein the region forms a sector of the free surface of the melt having a center angle α which is not less than 45° and not more than 135° and wherein the sector comprises a center axis D which is aligned perpendicular to the magnetic induction B or in a direction deviating up to −30° or +30° from a perpendicular alignment.
3. The apparatus of claim 1 , wherein the brim section extends transversely to the magnetic induction B and has a shape which is rectangular or elliptical or has the shape of a rectangle having rounded ends or ends which are elliptically broadened.
4. The apparatus of claim 1 , wherein the brim section has a length L and a width W which intersect in the center of the ring, wherein a ratio L/W fulfills the formula: 1.1<L/W<3.0.
5. The apparatus of claim 3 , wherein the brim section has a length L and a width W which intersect in the center of the ring, wherein a ratio L/W fulfills the formula: 1.1<L/W<3.0.
6. The apparatus of claim 1 , further comprising gas exhaust openings which are disposed in a non-axisymmetric manner with respect to the center axis M of the crucible to promote the gas to flow over the region of the free surface of the melt which extends substantially perpendicular to the magnetic induction B.
7. The apparatus of claim 2 , comprising gas exhaust openings which are disposed in a non-axisymmetric manner with respect to the center axis M of the crucible to promote the gas to flow over the region of the free surface of the melt which extends substantially perpendicular to the magnetic induction B.