Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer

1. A method for producing epitaxially coated semiconductor wafers, in which a multiplicity of prepared semiconductor wafers polished at least on their front sides are provided and successively coated individually by applying an epitaxial layer onto their polished front sides by chemical vapor deposition at temperatures of 800-1200° C. in a deposition reactor, comprising supporting a prepared semiconductor wafer to be epitaxially coated on a ring positioned between a susceptor and the semiconductor wafer which acts as a thermal buffer between the susceptor and the supported semiconductor wafer such that the semiconductor wafer rests on the ring, its backside faces a bottom of the susceptor having a gas-permeable structure but its backside does not touch the susceptor, such that gaseous substances are delivered from a region over the backside of the semiconductor wafer by gas diffusion through the susceptor into a region over the backside of the susceptor, the semiconductor wafer contacting the ring only in an edge region of the wafer backside, wherein the epitaxially coated semiconductor wafer comprises a front side and a backside, and is provided on its front side with an epitaxial layer that is free from stresses measurable by photoelastic stress measurement (“SIRD”) and which has a nanotopography on its backside, expressed as PV height variation of greater than or equal to 2 nm and less than or equal to 5 nm based on square measurement windows with an area of 2 mm×2 mm and a backside “halo” expressed as haze of greater than or equal to 0.1 ppm and less than or equal to 5 ppm.

2. The method of claim 1 , wherein the prepared semiconductor wafers are wafers of monocrystalline silicon.

3. The method of claim 1 , wherein a deposition temperature of 1140-1180° C. is selected for epitaxial coating of p+ doped silicon wafers.

4. The method of claim 1 , wherein a deposition temperature of 1100-1150° C. is selected for epitaxial coating of p− doped silicon wafers.

5. The method of claim 1 , wherein the ring comprises silicon carbide.

6. The method of claim 1 , wherein the ring comprises graphite coated with silicon carbide.

7. The method of claim 1 , wherein the ring material has a thermal conductivity of 5-100 W/mK at a temperature of 1000° C.

8. The method of claim 1 , wherein the ring material has a thermal conductivity of 5-50 W/mK at a temperature of 1000° C.

9. The method of claim 1 , wherein the ring material has a thermal conductivity of 10-30 W/mK at a temperature of 1000° C.

10. The method of claim 1 , wherein an inner diameter of the ring is less than the diameter of the semiconductor wafer for which the susceptor and the ring are configured.

11. The method of claim 1 , wherein the ring has an annular recess having a width of 5-15 mm and a depth of 0.3-0.7 mm, in the direction of its inner diameter.

12. The method of claim 1 , wherein the ring has a thickness of 0.5-1.5 mm.

13. The method of claim 1 , wherein the susceptor has a porosity of at least 15% and a density of 0.5-1.5 g/cm 3 .

14. A semiconductor wafer comprising a front side and a backside, which is provided on its front side with an epitaxial layer that is free from stresses measurable by photoelastic stress measurement (“SIRD”) and which has a nanotopography on its backside, expressed as PV height variation of greater than or equal to 2 nm and less than or equal to 5 nm based on square measurement windows with an area of 2 mm×2 mm and a backside “halo” expressed as haze of greater than or equal to 0.1 ppm and less than or equal to 5 ppm.

15. The semiconductor wafer of claim 14 , having an edge roll-off parameter of from −10 nm to +10 nm which corresponds to a deviation, measured at a distance of 1 mm from the edge of the silicon wafer, of an average cross section determined by thickness measurement from a reference line determined by regression.

16. The semiconductor wafer of claim 14 , having a maximum local flatness value SFQR max of greater than or equal to 0.025 μm and less than or equal to 0.04 μm.

17. The semiconductor wafer of claim 14 , having a resistance uniformity in the epitaxial layer of greater than or equal to ±2% and less than or equal to ±5%.

18. The semiconductor wafer of claim 14 , having a recombination lifetime measured by μPCD of 2500-3000 μs.

19. The semiconductor wafer of claim 14 , comprising a wafer of monocrystalline silicon, onto which an epitaxial silicon layer is applied, and having a diameter of 150 mm, 200 mm, 300 mm or 450 mm.