Semiconductor wafer having epitaxial layer
A semiconductor wafer of monocrystalline silicon. The semiconductor wafer having: a substrate wafer of monocrystalline silicon; and a layer of monocrystalline silicon that lies on a front side of the substrate wafer. The substrate wafer has a crystal orientation. An averaged front side-based ZDD of the semiconductor wafer, with a division of a surface of an epitaxial layer into 16 sectors and an edge exclusion of 1 mm, is not less than −30 nm/mm 2 and not more than 0 nm/mm 2 . An ESFQR max of the semiconductor wafer, with an edge exclusion of 1 mm and 72 sectors each with a length of 30 mm, is at most 10 nm.
1. A semiconductor wafer of monocrystalline silicon, the semiconductor wafer comprising:
a substrate wafer of monocrystalline silicon; and
a layer of monocrystalline silicon that lies on a front side of the substrate wafer,
wherein the substrate wafer has a crystal orientation,
wherein an averaged front side-based double derivative of a height Z (ZDD) of the semiconductor wafer, with a division of a surface of an epitaxial layer into 16 sectors and an edge exclusion of 1 mm, is not less than −30 nm/mm2 and not more than 0 nm/mm 2 , and
wherein a maximum edge site front least-squares range (ESFQR max ) of the semiconductor wafer, with an edge exclusion of 1 mm and 72 sectors each with a length of 30 mm, is at most 10 nm.
2. The semiconductor wafer of monocrystalline silicon as claimed in claim 1 , wherein the crystal orientation is a {100} orientation.
3. The semiconductor wafer of monocrystalline silicon as claimed in claim 1 , wherein the crystal orientation is a {110} orientation.
4. The semiconductor wafer of monocrystalline silicon as claimed in claim 1 , wherein a diameter of the semiconductor wafer is not less than 300 mm.
5. The semiconductor wafer of monocrystalline silicone as claimed in claim 1 , wherein ZDD is determined according to SEMI M68-1015 and ESFQR max is determined according to SEMI M67-1015.
6. The semiconductor wafer of monocrystalline silicone as claimed in claim 1 , further comprising an oxide layer at an edge of the substrate wafer.
7. The semiconductor wafer of monocrystalline silicone as claimed in claim 1 , further comprising an oxide layer on a back side of the semiconductor wafer.
8. The semiconductor wafer of monocrystalline silicone as claimed in claim 1 , wherein the layer of monocrystalline silicon is not present at an edge region of the semiconductor wafer or on a back side of the semiconductor wafer.