Method for epitaxially coating semiconductor wafers, and semiconductor wafer
Semiconductor wafers are coated with an epitaxially deposited layer in an epitaxy reactor, wherein at least one semiconductor wafer is arranged on a respective susceptor in the epitaxy reactor and a first deposition gas for coating the at least one semiconductor wafer is conducted through the epitaxy reactor, wherein an etching process in which a first etching gas and a carrier gas are conducted through the epitaxy reactor is carried out before the coating process, and wherein a cleaning process in which a second etching gas and subsequently in particular a second deposition gas are conducted through the epitaxy reactor after a predefinable number of coating processes, wherein for two or more etching processes preceding the respective coating process at least one variable which influences the etching process is set individually. Semiconductor wafers processed thereby have distinctly uniform topology.
1. A method for coating a plurality of semiconductor wafers with an epitaxially deposited layer on a wafer surface in an epitaxy reactor, comprising:
a) arranging one semiconductor wafer of the plurality of semiconductor wafers on a susceptor in an epitaxy reactor and epitaxially coating said one semiconductor wafer by a coating process comprising
a)i) subjecting said one semiconductor wafer to an etching process in which a first etching gas and a carrier gas contact the wafer surface,
a)ii) introducing a first deposition gas into the epitaxy reactor thereby depositing an epitaxial layer on said one semiconductor wafer,
a)iii) cooling the epitaxy reactor and removing the one semiconductor wafer;
b) repeating steps a) for a plurality of coating processes;
c) conducting a cleaning process after said plurality of coating processes, said cleaning process comprising supplying a second etching gas into the epitaxy reactor to remove deposits made during the plurality of coating processes, followed optionally by a chamber coating process wherein a second deposition gas is introduced into the epitaxy reactor;
d) measuring at least one shape parameter selected from the group of shape parameters ZDD (according to SEMI-M67), SFQR (according to SEMI-M1), ESFQR (according to SEMI-M67) and ROA (according to SEMI-M77), of at least one wafer of the plurality of wafers being coated; and
e) for two or more etching processes a)i) which precede the coating of a given wafer of the plurality of wafers, varying at least one variable which influences the etching process, selected from the group consisting of
e)i) a gas flow rate of the first etching gas,
e)ii) a gas flow rate of the carrier gas,
e)iii) a temperature in the epitaxy reactor during the etching process,
e)iv) a duration of the etching process, and
e)v) a rotational speed of the semiconductor wafer,
in response to the measured shape parameter, wherein as a result of varying at least one of e)i)-e)v) the shape of the given wafer is improved.
2. The method of claim 1 , wherein between two successive cleaning processes c), the at least one variable which influences the etching process is altered relative to a preceding etching process.
3. The method of claim 1 , wherein the at least one variable which influences the etching process is individually adjusted by also taking into account the geometrical dimensions of the next semiconductor wafer to be coated.
4. The method of claim 1 , wherein the temperature in the epitaxy reactor is decreased relative to a preceding etching process and/or the duration of the etching process is increased relative to a preceding etching process.
5. The method of claim 4 , wherein the duration of the etching process is increased by one second for each successive wafer.
6. The method of claim 1 , wherein the gas flow rate of the first etching gas is set to a value of between 2 slm and 5 slm and the gas flow rate of the carrier gas is set to a value of between 30 slm and 110 slm, and/or the temperature in the epitaxy reactor during the etching process is set to a value of between 1050° C. and 1200° C.
7. The method of claim 1 , wherein the gas flow rate of the first etching gas is set to a value of between 2 slm and 5 slm and the gas flow rate of the gas used in addition to the first etching gas in the etching process is set to a value of between 40 slm and 70 slm, and/or the temperature in the epitaxy reactor during the etching process is set to a value of between 1050° C. and 1200° C.
8. The method of claim 1 , wherein in the first etching process which takes place after a cleaning process, the duration of the etching process is set to a value of between 1 s and 10 s.
9. The method of claim 1 , further comprising conducting hydrogen through the epitaxy reactor before an etching process for a pretreatment.
10. The method of claim 1 , wherein the cleaning process is carried out in each case after 8 to 30 coating processes.
11. The method of claim 1 , wherein the cleaning process c) is carried out after 15 to 20 coating processes.
12. The method of claim 1 , wherein hydrogen chloride is used as a first etching gas and/or as second etching gas.
13. The method of claim 1 , wherein in each coating process, a layer of between 1 and 10 μm is deposited on the semiconductor wafer.
14. The method of claim 1 , wherein in each coating process a)ii), a layer of between 2 and 5 μm is deposited on the semiconductor wafer.
15. The method of claim 1 , wherein the semiconductor wafers are silicon wafers.
16. The method of claim 1 , wherein hydrogen is used as a carrier gas.
17. The method of claim 1 , wherein trichlorosilane is used as a first deposition gas and/or as a second deposition gas.
18. An epitaxially coated semiconductor wafer having an ESFQR value of less than 9 nm given an edge exclusion (R 1 ) of at least 2 mm and at least 50 sectors having a length (R 2 ) of at most 40 mm, prepared by the method of claim 1 .
19. Epitaxially coated semiconductor wafers in a production cycle of 25 units or more, wherein the variation of the ZDD value given an edge exclusion (R 1 ) of at least 2 mm is ≤2 nm, prepared by the method of claim 1 .