Method of manufacturing silicon single crystal, silicon single crystal, and wafer
View Patent ↗P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cm 3 and the ratio of the phosphorus concentration to the boron concentration is not lower than 0.42 and not higher than 0.50.
1. A method for manufacturing a silicon single crystal, comprising growing a p-type silicon single crystal by the Czochralski method from an initial silicon melt in which boron is present in a concentration not higher than 4E14 atoms/cm 3 , phosphorus is contained in the initial silicon melt, and the ratio of phosphorus concentration to boron concentration is not lower than 0.42 and not higher than 0.50, and setting the ratio of the rate of cooling of an edge portion of the silicon single crystal to the rate of cooling of a central portion of the silicon single crystal to between 1.4 and 2.0.
2. A p-type silicon single crystal grown by the Czochralski method from an initial silicon melt to which boron and phosphorus were added, having a resistivity along a central crystal growth axis not lower than 50 Ω·cm and a rate of change in resistivity along said central crystal growth axis not higher than 10%, measured in a constant diameter section of the p-type silicon single crystal up to a point where 80% of the single crystal has been solidified from the silicon melt.
3. The p-type silicon single crystal of claim 2 , wherein the rate of change of resistivity in a cross-section perpendicular to said central crystal growth axis is not higher than 3%.
4. A wafer obtained by slicing the p-type silicon single crystal of claim 2 perpendicular to the central crystal growth axis.
5. A wafer obtained by slicing the p-type silicon single crystal of claim 3 perpendicular to the central crystal growth axis.
6. A heat treated wafer having an oxide film after heat treatment with a thickness of 2 nm or less, prepared by heat treating a wafer of claim 4 in a non-oxidizing atmosphere at a temperature not lower than 1150° C. and not higher than 1250° C. for a time period not less than 10 minutes and not greater than 2 hours.
7. The wafer according to claim 6 , wherein the non-oxidizing atmosphere in the heat treatment is a noble gas atmosphere in which total impurities are 5 ppma or less.
8. A heat treated wafer having an oxide film after heat treatment with a thickness of 2 nm or less, prepared by heat treating a wafer of claim 5 in a non-oxidizing atmosphere at a temperature not lower than 1150° C. and not higher than 1250° C. for a time period not less than 10 minutes and not greater than 2 hours.
9. The wafer according to claim 8 , wherein the non-oxidizing atmosphere in the heat treatment is a noble gas atmosphere in which total impurities are 5 ppma or less.