Method and apparatus for depositing a material layer originating from process gas on a substrate wafer
View Patent ↗An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains: a reactor chamber delimited by an upper dome, a lower dome, and a side wall; a susceptor for holding the substrate wafer during the deposition of the material layer; a preheating ring surrounding the susceptor; a liner, on which the preheating ring is supported in a centered position wherein a gap having a uniform width is present between the preheating ring and the susceptor; and a spacer acting between the liner and the preheating ring, the spacer keeping the preheating ring in the centered position and providing a distance Δ between the preheating ring and the liner.
1. An apparatus for depositing a material layer originating from process gas on a substrate wafer, comprising
a reactor chamber, which is delimited by an upper dome and a lower dome and a side wall;
a rotatable susceptor for holding the substrate wafer during deposition of the material layer;
a preheating ring surrounding the susceptor, the preheating ring having a circular central opening within which the rotatable susceptor rotates;
a liner, on which the preheating ring is supported in a centered position wherein a gap D having a uniform width is present between the preheating ring and the susceptor; and
a spacer between the liner and the preheating ring, the spacer keeping the preheating ring in a centered position and providing a vertical distance Δ between the preheating ring and the liner, the spacer comprising balls embedded partly in recesses in the preheating ring and partly in the liner, which enable a relative radial movement between the preheating ring and the liner due to thermal expansion, each ball lying in a elongated recess extending in a radial direction.
2. The apparatus of claim 1 , wherein the gap D has a uniform width of not less than 0.1 mm and not more than 2 mm.
3. The apparatus of claim 1 , wherein the distance between an outer lateral boundary of the preheating ring and an inner lateral boundary of the liner proximate the outer lateral boundary of the preheating ring is not less than 0.1 mm and not more than 1.9 mm.
4. The apparatus of claim 2 , wherein the distance between an outer lateral boundary of the preheating ring and an inner lateral boundary of the liner proximate the outer lateral boundary of the preheating ring is not less than 0.1 mm and not more than 1.9 mm.
5. The apparatus of claim 1 , wherein the vertical distance Δ between the preheating ring and the liner, in a region adjoining the spacer is not less than 0.01 mm and not more than 2 mm.
6. The apparatus of claim 2 , wherein the vertical distance Δ between the preheating ring and the liner, in a region adjoining the spacer is not less than 0.01 mm and not more than 2 mm.
7. The apparatus of claim 3 , wherein the vertical distance Δ between the preheating ring and the liner, in a region adjoining the spacer is not less than 0.01 mm and not more than 2 mm.
8. The apparatus of claim 4 , wherein the vertical distance Δ between the preheating ring and the liner, in a region adjoining the spacer is not less than 0.01 mm and not more than 2 mm.
9. The apparatus of claim 1 , wherein the balls are embedded in the preheating ring and in the liner such that the balls are enabled to move in a radial direction with respect to the center of the susceptor.
10. The apparatus of claim 1 , wherein the balls are located in elongated recesses in the liner which extend radially from a geometric center of the liner.
11. The apparatus of claim 1 , wherein the balls are located in elongated recesses in the preheating ring which extend radially from a geometric center of the preheating ring.
12. The apparatus of claim 10 , wherein the balls are located in elongated recesses in the preheating ring which extend radially from a geometric center of the preheating ring.
13. A method for depositing a material layer originating from process gas on a substrate wafer, comprising
directing the process gas over a preheating ring to a substrate wafer held by a rotating susceptor, in an apparatus of claim 1 .
14. The method of claim 13 , wherein the substrate wafer is held during deposition in a centered position in which a gap D is present between the preheating ring and the susceptor, the gap D having a uniform width of not less than 0.1 mm and not more than 2 mm.
15. A method for depositing a material layer originating from process gas on a substrate wafer, comprising
directing the process gas over a preheating ring to a substrate wafer held by a rotating susceptor, in an apparatus of claim 2 .
16. A method for depositing a material layer originating from process gas on a substrate wafer, comprising
directing the process gas over a preheating ring to a substrate wafer held by a rotating susceptor, in an apparatus of claim 3 .