IP Library Granted Patent US 7,297,570
Granted Patent B2
US 7,297,570 · App. 11/022,858 · Granted Nov 20, 2007

Complementary metal oxide semiconductor image sensor and method for fabricating the same

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Quick Facts
Patent No.
US 7,297,570
App. No.
11/022,858
Granted
Nov 20, 2007
Kind
B2
Abstract

A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the efficiency in condensing the light by forming a multi-layered micro lens with various materials having different refractive indexes, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a first micro-lens layer on an entire surface of the color filter layers, to condense the light; and a plurality of second micro-lens layers on the first micro-lens layer in correspondence with the respective photosensitive devices, wherein the second micro-lens layer has the different refractive index from that of the first micro-lens layer.

Claims (11)

1. A method for fabricating a CMOS image sensor comprising:

forming an insulating interlayer on a semiconductor substrate having a plurality of photosensitive devices;

forming color filter layers having a first refractive index on the insulating interlayer in correspondence with the respective photosensitive devices;

forming a first micro-lens layer having a second refractive index to have a flat shape and to cover substantially an entire surface of the color filter layers; and

forming a second micro-lens layer having a third refractive index on the first micro-lens layer;

wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.

2. The method of claim 1 , wherein the first and second micro-lens layers are respectively formed of an oxide layer and a photoresist, or are formed of any one material having the different refractive indexes.

3. The method of claim 1 , further comprising,

forming a protective layer between the insulating interlayer and the color filter layers.

4. The method of claim 1 , further comprising,

forming a top-coating layer between the color filter layers and the first micro-lens layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 7, 2015
From: DONGBU ELECTRONICS CO., LTD.
To: III HOLDINGS 4, LLC
Reel/Frame 035383/0560 →
CHANGE OF NAME Recorded Jul 13, 2006
From: DONGBUANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 018099/0281 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2004
From: KIM, SHANG WON
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016129/0963 →