Methods of fabricating semiconductor devices
One example disclosed semiconductor device fabrication method includes depositing a pad oxide layer and a nitride layer on a semiconductor substrate, exposing the semiconductor substrate by patterning the pad oxide layer and the nitride layer so as to define a field region, injecting oxygen ions into the field region, and thermal-treating the ion-injected field region.
1 . A method for fabricating a semiconductor device, comprising:
depositing a pad oxide layer and a nitride layer on a semiconductor substrate;
exposing the semiconductor substrate by patterning the pad oxide layer and the nitride layer so as to define a field region;
injecting oxygen ions into the field region; and
thermal-treating the ion-injected field region.
2 . The method of claim 1 , wherein the oxygen ions are injected at a depth in the range of 1000 Å-5000 Å.
3 . The method of claim 1 , wherein the nitride layer is formed at a thickness in the range of 1000 Å-10000 Å.
4 . The method of claim 1 , wherein the oxygen ions are injected with a concentration in the range of 1×10 20 -1×10 22 [ions/cm 3 ].