Masks of semiconductor devices and methods of forming patterns thereof
View Patent ↗Disclosed are a mask of a semiconductor device and a method for forming a pattern thereof, which is capable of correcting a line width bias between a long line width and a short line width when a mask of a semiconductor transistor is formed. The mask may include a plurality of rectangular light shielding patterns formed on a mask disc on which gate line and contact holes are formed; and a connection pattern composed of a plurality of division patterns for selectively connecting the plurality of rectangular light shielding patterns one another. The plurality of rectangular light shielding patterns overlap with the contact hole mask and are formed on both sides of the connection pattern. The connection pattern is divided into 3 to 7 division patterns.
1. A mask used in fabricating a CMOS semiconductor device, comprising:
a plurality of rectangular light shielding patterns on a mask; and
a connection pattern comprising three or more rectangular division patterns between the plurality of rectangular light shielding patterns, wherein at least one of the rectangular division patterns has a greater vertical length than at least two other rectangular division patterns, and the vertical lengths of the rectangular division patterns correspond to a gate line width.
2. The mask of claim 1 , wherein the plurality of rectangular light shielding patterns overlap with a contact hole mask and are on both sides of the connection pattern.
3. The mask of claim 1 , wherein the connection pattern consists of 3 to 7 rectangular division patterns.
4. The mask of claim 1 , wherein at least one of the rectangular division patterns overlaps with the gate line.
5. A method for forming a mask pattern used in fabricating a CMOS semiconductor device, comprising:
forming a plurality of rectangular light shielding patterns on a mask;
forming a connection pattern comprising three or more rectangular division patterns for between the plurality of rectangular light shielding patterns, wherein at least one of the rectangular division patterns has a greater vertical length than at least two other rectangular division patterns, and the vertical lengths of the rectangular division patterns correspond to a gate line width;
forming a gate line in a region of the CMOS semiconductor device between regions corresponding to the plurality of rectangular light shielding patterns; and
forming contact holes in regions of the CMOS semiconductor device corresponding to the plurality of rectangular light shielding patterns.
6. The method of claim 5 , wherein the plurality of rectangular light shielding patterns overlap with a contact hole mask and are on both sides of the plurality of division pattern.
7. The method of claim 5 , wherein connection pattern consists of 3 to 7 division patterns.
8. The mask of claim 1 , wherein a width of the connection pattern is less than a width of a corresponding rectangular light shielding pattern.
9. The mask of claim 1 , wherein each of the plurality of rectangular light shielding patterns overlap with a contact hole.
10. The method of claim 5 , further comprising forming rectangular light shielding patterns on opposite sides of the connection pattern.
11. The mask of claim 3 , wherein at least one of the rectangular division patterns overlaps with the gate line.
12. The mask of claim 11 , wherein each of the rectangular division pattern overlaps with the gate line.
13. The mask of claim 4 , wherein each of the at least one rectangular division pattern overlaps with the gate line.
14. The mask of claim 1 , wherein a gate line is formed in a region of the CMOS semiconductor device between regions corresponding to the plurality of rectangular light shielding patterns.
15. The mask of claim 1 , wherein contact holes are formed in regions of the CMOS semiconductor device corresponding to the plurality of rectangular light shielding patterns.
16. The mask of claim 4 , wherein at least two rectangular division patterns do not overlap with the gate line.
17. The mask of claim 3 , wherein at least two rectangular division patterns do not overlap with the gate line.