Nonvolatile semiconductor memory devices and methods of manufacturing the same

1. A nonvolatile memory cell comprising:

a semiconductor substrate;

first and second memory cells on the semiconductor substrate and separated by a distance;

a first source and a second source in the semiconductor substrate adjacent the first and second memory cells;

a drain in the semiconductor substrate between the first and second memory cells;

first and second cap dielectrics on top surfaces of the first and second memory cells, respectively;

first and second sidewall spacers on sidewalls of the first and second memory cells, respectively;

a dielectric layer in direct physical contact with the first and second cap dielectrics and the first and second sidewall spacers on opposite sidewalls of the first and second memory cells, the dielectric layer defining a drain contact hole exposing the drain and the first and second sidewall spacers on one of the opposite sidewalls of each of the first and second memory cells; and

a drain contact connected to the drain through the drain contact hole.

2. The nonvolatile memory device as defined in claim 1 , wherein the first memory cell comprises:

a first gate dielectric on the semiconductor substrate;

a first floating gate on the first gate dielectric layer,

a first inter poly layer on the first floating gate;

a first control gate on the first inter poly layer.

3. The nonvolatile memory device as defined in claim 2 , wherein the second memory cell comprises:

a second gate dielectric on the semiconductor substrate;

a second floating gate on the second gate dielectric;

a second inter poly layer on the second floating gate; and

a second control gate on the second inter poly layer.

4. The nonvolatile memory device as defined in claim 3 , wherein the first and second floating gates and the first and second control gates comprise polysilicon.

5. The nonvolatile memory device as defined in claim 3 , wherein the first sidewall spacer contacts the first gate dielectric layer, the first floating gate, the first inter poly layer, the first control gate, and the first cap dielectric, and the second sidewall spacer contacts the second gate dielectric layer, the second floating gate, the second inter poly layer, the second control gate, and the second cap dielectric.

6. The nonvolatile memory device as defined in claim 3 , wherein the first and second sources are on opposite sides of the first and second control gates, respectively, from the drain.

7. The nonvolatile memory device as defined in claim 1 , wherein the first and second sidewall spacers comprise a nitride.

8. The nonvolatile memory device as defined in claim 1 , wherein the first source has a first pardon in an area of the substrate lateral to the first memory cell and a second portion in an area of the substrate underneath the first memory cell.

9. The nonvolatile memory device as defined in claim 8 , wherein the second source has a first portion in an area of the substrate lateral to the second memory cell, and a second portion in an area of the substrate underneath the second memory cell.

10. The nonvolatile memory device as defined in claim 1 , wherein the drain has a first portion in an area of the substrate between the first and second memory cells, and second portions in areas of the substrate under the first and second memory cells.

11. The nonvolatile memory device as defined in claim 1 , wherein the drain contact comprises tungsten or copper.

12. The nonvolatile memory device as defined in claim 1 , wherein the drain is shared by the first and second memory cells.

13. A method for fabricating a nonvolatile memory cell, comprising:

forming a first memory cell and a second memory cell on a semiconductor substrate, the first and second memory cells being separated by a distance;

forming a first source and a second source adjacent the first and second memory cells;

forming a drain between the first and second memory cells;

forming first and second cap dielectrics on the first and second memory cells, respectively;

forming first and second sidewall spacers on sidewalls of the first and second memory cells, respectively;

forming a dielectric layer in direct physical contact with the first and second cap dielectrics and the first and second sidewall spacers on opposite sidewalls of the first and second memory cells;

forming a drain contact hole in the dielectric layer exposing the drain and the first and second sidewall spacers on one of the opposite sidewalls of each of the first and second memory cells, without exposing either of the first and second cap dielectrics; and

forming a drain contact connected to the drain in the drain contact hole.

14. The method as defined in claim 13 , wherein forming the first and second sidewall spacers comprises forming and patterning a nitride layer.

15. The method as defined in claim 13 , wherein forming the drain contact hole comprises etching the dielectric layer.

16. The method as defined in claim 13 , wherein the first and second sidewall spacers protect the medial sidewalls of the first and second memory cells during etching.

17. The method as defined in claim 13 , wherein forming the drain contact comprises depositing tungsten or copper.

18. The method as defined in claim 13 , wherein the drain is shared by the first and second memory cells.

19. The method as defined in claim 13 , wherein each of the first and second memory cells comprises:

a gate dielectric on the semiconductor substrate;

a floating gate on the gate dielectric layer;

an inter poly layer on first floating gate;

a control gate on the inter poly layer.

20. The method as defined in claim 19 , wherein the first and second sources are on opposite sides of the control gates of the first and second memory cells, respectively, from the drain.