Side structure of a bare LED and backlight module thereof
The present invention discloses a side structure of a bare LED and a backlight module thereof, wherein the backlight module is preferably a light source of a display device such as an LCD device. The backlight module includes a flat plate covered with a thermally conductive dielectric material, a plurality of the side structures of the bare LEDs placed on the flat plate and in contact with the thermally conductive dielectric material, and a plurality of reflection parts also placed on the flat plate, each side structure of each bare LED includes a bare LED and two electrically conductive materials coupled to two bonding pads of the side structure of the bare LED respectively, and positioned on the flat plate therefor.
1. A side structure of a bare light-emitting diode mounted on a surface of a carrying plate, comprising:
a bare light-emitting diode, comprising: a first bonding pad;
a substrate coupled to the first bonding pad;
a P-type epitaxy coupled to the substrate;
an active layer coupled to the P-type epitaxy;
an N-type epitaxy coupled to the active layer; and a second bonding pad coupled to the N-type epitaxy; and
at least two conductive materials coupled to the first bonding pad and said second bonding pad respectively so that the bare light-emitting diode is mounted on the surface of said carrying plate;
wherein the area of the first bonding pad and the second bonding pad is smaller than the area of the active layer; and
wherein the carrying plate is a metal plate covered with a dielectric material.
2. A side structure of a bare light-emitting diode mounted on a surface of a carrying plate, comprising:
a bare light-emitting diode, comprising: a first bonding pad;
a substrate coupled to the first bonding pad;
a P-type epitaxy coupled to the substrate;
an active layer coupled to the P-type epitaxy;
an N-type epitaxy coupled to the active layer; and a second bonding pad coupled to the N-type epitaxy; and
at least two conductive materials coupled to the first bonding pad and said second bonding pad respectively so that the bare light-emitting diode is mounted on the surface of said carrying plate;
wherein the area of the first bonding pad and the second bonding pad is smaller than the area of the active layer;
wherein the side structure of the bare light-emitting diode has a passivation layer on the surface thereof; and
wherein the passivation layer has a refraction coefficient which is larger than a refraction coefficient of air and smaller than a refraction coefficient of the surface of side structure of the bare light-emitting diode.
3. A side structure of a bare light-emitting diode mounted on a surface of a carrying plate, comprising:
a bare light-emitting diode, comprising: a first bonding pad;
a substrate coupled to the first bonding pad;
a P-type epitaxy coupled to the substrate;
an active layer coupled to the P-type epitaxy;
an N-type epitaxy coupled to the active layer; and a second bonding pad coupled to the N-type epitaxy; and
at least two conductive materials coupled to the first bonding pad and said second bonding pad respectively so that the bare light-emitting diode is mounted on the surface of said carrying plate;
wherein the area of the first bonding pad and the second bonding pad is smaller than the area of the active layer; and
wherein said carrying plate has a heat dissipating device disposed on one surface thereof.
4. A backlight module serving as a backlight source of a display device, comprising:
a carrying plate mounted with a material capable of thermal conduction; and
a plurality of side structures of bare light-emitting diodes disposed on said carrying plate and in contact with the material;
wherein each of the side structures of bare light-emitting diodes comprises a bare light-emitting diode, comprising a first bonding pad, a substrate coupled to the first bonding pad, a P-type epitaxy coupled to the substrate, an active layer coupled to the P-type epitaxy, an N-type epitaxy coupled to the active layer, a second bonding pad coupled to the N-type epitaxy, and at least two conductive materials coupled to the first bonding pad and the second bonding pad respectively so that the bare light-emitting diode is mounted on the surface of the carrying plate;
wherein the area of the first bonding pad and the second bonding pad is smaller than the area of the active layer.
5. The backlight module of claim 4 , wherein the backlight module further comprises a plurality of reflecting components mounted on the carrying plate.
6. The backlight module of claim 4 , wherein the backlight module further comprises a diffusing device mounted over the carrying plate.
7. The backlight module of claim 4 , wherein the backlight module serves as a direct type backlight source of the display device.
8. The backlight module of claim 4 , wherein the backlight module serves as side-edge backlight source of the display device.
9. The backlight module of claim 4 , wherein the display device is a liquid crystal display.
10. The backlight module of claim 4 , wherein the carrying plate is a metal plate covered with a dielectric material.
11. The backlight module of claim 4 , wherein the side structure of a bare light-emitting diode has a passivation layer disposed on the surface thereof.
12. The backlight module of claim 11 , wherein the passivation layer has a refraction coefficient which is larger than a refraction coefficient of air and smaller than a refraction coefficient of the surface of side structure of the bare light-emitting diode.
13. The backlight module of claim 4 , wherein a heat dissipating device is disposed on the carrying plate.
14. The backlight module of claim 4 , wherein the substrate is a GaAs substrate.
15. The backlight module of claim 4 , wherein the substrate is a GaP substrate.