Semiconductor device and method for manufacturing the same
View Patent ↗A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrO x film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrO x film containing columnar crystals is formed.
1. A semiconductor device comprising:
a semiconductor substrate;
a lower electrode formed above said semiconductor substrate;
a ferroelectric film formed on said lower electrode; and
an upper electrode formed on said ferroelectric film, said upper electrode including a conductive oxide film that is crystallized when formed at a lowest layer of said upper electrode, and a conductive film formed on said conductive oxide film,
wherein an orientation intensity to a (200) plane is higher than an orientation intensity to a (110) plane in said conductive oxide film, and
wherein an average diameter of grains in said conductive oxide film is smaller than that in said conductive film.
2. The semiconductor device according to claim 1 , wherein said conductive oxide film is an iridium oxide film.
3. The semiconductor device according to claim 1 , wherein said conductive film includes columnar crystals formed on said conductive oxide film.