IP Library Granted Patent US 7,248,071
Granted Patent B2
US 7,248,071 · App. 11/023,860 · Granted Jul 24, 2007

Logic array devices having complex macro-cell architecture and methods facilitating use of same

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Quick Facts
Patent No.
US 7,248,071
App. No.
11/023,860
Granted
Jul 24, 2007
Kind
B2
Abstract

Logic array devices having complex macro-cell architecture and methods facilitating use of same. A semiconductor device comprising an array of logic cells and programmable metal includes gate structures that are pre-wired, where, inputs and/or outputs are available for routing in programmable metal, possibly as part of a hybrid process. The device can also include selectable, in-line inverters, which can share the input/output tracks with logic inputs. A bubble-pushing algorithm can take advantage of the selectable in-line inverters to reduce the number of inverters in a design. In some embodiments, an embedded clock line is common to a plurality of logic cells. The clock line is terminated in a clock cell, which can include test logic, so that a clock group is formed. Flexibility to power down cells, or groups of cells can be provided by power traces with programmable connections.

Claims (20)

1. A semiconductor device comprising an array of logic cells and programmable metal adjacent to the array of logic cells, the semiconductor device further comprising:

a power trace within the programmable metal traversing at least one cell of the array of logic cells; and

a programmable connection between the power trace and the at least one cell wherein power has been selectively connected to gate structures within the at least one cell.

2. The semiconductor device of claim 1 wherein the programmable connection is a via.

3. The semiconductor device of claim 1 wherein the plurality of gate structures further comprises:

a plurality of NAND gates;

a plurality of multiplexers;

a FLOP; and

an high-drive inverter.

4. The semiconductor device of claim 2 wherein the plurality of gate structures further comprises:

a plurality of NAND gates;

a plurality of multiplexers;

a FLOP; and

an high-drive inverter.

5. The semiconductor device of claim 1 further comprising an embedded clock line common to a plurality of the logic cells.

6. The semiconductor device of claim 5 further comprising an embedded reset line common to the plurality of logic cells.

7. The semiconductor device of claim 6 further comprising test logic connected to the embedded clock line and the embedded reset line.

8. The semiconductor device of claim 2 further comprising an embedded clock line common to a plurality of the logic cells.

9. The semiconductor device of claim 8 further comprising an embedded reset line common to the plurality of logic cells.

10. The semiconductor device of claim 9 further comprising test logic connected to the embedded clock line and the embedded reset line.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Jul 13, 2020
From: PARTNERS FOR GROWTH IV, L.P.
To: TRIAD SEMICONDUCTOR, INC.
Reel/Frame 053187/0495 →
SECURITY INTEREST Recorded Jul 10, 2020
From: TRIAD SEMICONDUCTOR, INC.
To: CP BF LENDING, LLC
Reel/Frame 053180/0379 →
RELEASE OF SECURITY INTEREST Recorded Jun 30, 2020
From: SILICON VALLEY BANK
To: TRIAD SEMICONDUCTOR, INC.
Reel/Frame 053087/0492 →
AMENDED AND RESTATED INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Mar 16, 2016
From: TRIAD SEMICONDUCTOR, INC.
To: SILICON VALLEY BANK
Reel/Frame 038106/0300 →
SECURITY INTEREST Recorded Mar 3, 2016
From: TRIAD SEMICONDUCTOR, INC.
To: PARTNERS FOR GROWTH IV, L.P.
Reel/Frame 037885/0344 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2012
From: VIASIC, INC.
To: TRIAD SEMICONDUCTOR, INC.
Reel/Frame 029418/0552 →