Methods of manufacturing a MOS transistor
View Patent ↗Methods of manufacturing MOS transistors which are capable of suppressing a short channel effect are disclosed. The short channel effect is suppressed by forming source/drain regions of a shallow junction and sufficiently doping a gate. An illustrated method includes: forming a gate insulating layer and a gate on a semiconductor substrate of a first conductivity type; forming lightly doped drain regions of a second conductivity type within the substrate at opposite sides of the gate; forming spacers on side walls of the gate; forming an insulating buffer layer; exposing a top surface of the gate by performing a planarization process on the insulating buffer layer; doping the gate by implanting impurity ions of the second conductivity type into the top surface of the gate; removing the insulating buffer layer; and forming source/drain regions of the second conductivity type within the substrate at opposite sides of the spacers.
1. A method of manufacturing a MOS transistor comprising:
forming a gate insulating layer and a gate on a semiconductor substrate of a first conductivity type;
forming lightly doped drain regions of a second conductivity type within the substrate on opposite sides of the gate;
forming spacers on side walls of the gate;
forming an insulating buffer layer;
exposing a top surface of the gate by performing a planarization process on the insulating buffer layer;
doping the gate by implanting impurity ions of the second conductivity type into the top surface of the gate;
removing the insulating buffer layer; and
forming source/drain regions of the second conductivity type within the substrate on opposite sides of the spacers.
2. A method as defined in claim 1 , wherein the insulating buffer layer comprises a TEOS (tetra ethoxy silane) layer.
3. A method as defined in claim 2 , wherein the planarization process is a CMP process.
4. A method as defined in claim 1 , wherein the insulating buffer layer is formed by stacking a low temperature oxide (LTO) layer and a BPSG (boron phosphorus silicate glass) layer.
5. A method as defined in claim 4 , wherein the planarization process is an etch-back process.
6. A method as defined in claim 1 further comprising forming halo regions in contact with the lightly doped drain regions within the substrate.
7. A method as defined in claim 6 wherein the halo regions are located inwardly from the lightly doped drain regions, and the halo regions are formed after forming the lightly doped drain regions and before forming the spacers.
8. A method as defined in claim 6 , wherein forming the halo regions comprises implanting impurity ions in a tilted direction with respect to the substrate.
9. A method as defined in claim 1 further comprising performing a thermal treatment process after forming the lightly doped drain regions and before forming the spacers.
10. A method as defined in claim 9 , wherein the thermal treatment process is performed at a temperature of about 700 to 1050° C. in an N 2 ambience for about 5 to 30 seconds by an RTP.
11. A method as defined in claim 1 further comprising performing a thermal treatment process after forming the source/drain regions.
12. A method as defined in claim 11 , wherein the thermal treatment process is performed at a temperature of about 700 to 1050° C. in an N 2 ambience for about 5 to 30 seconds by an RTP.
13. A method as defined in claim 1 , wherein the first conductivity type is an n-type and the second conductivity type is a p-type.
14. A method as defined in claim 13 , wherein the source/drain regions are formed by performing ion implanting at an implanting energy of about 5 to 50 keV at a concentration of about 1×10 15 to 5×10 15 ions/cm 2 using boron (B) ions.
15. A method as defined in claim 1 , the first conductivity type is a p-type and the second conductivity type is an n-type.
16. A method as defined in claim 15 , wherein the source/drain regions are formed by performing ion implanting at an implanting energy of about 10 to 80 keV at a concentration of about 1×10 15 to 5×10 15 ions/cm 2 using arsenic (As) ions.