Methods of fabricating semiconductor devices
View Patent ↗Methods of recovering damage on a semiconductor device by performing a hydrogen annealing process are disclosed. An example disclosed method includes forming an STI structure on a semiconductor substrate; forming a gate electrode and spacers on the sidewalls of the gate electrode; implanting ions into source and drain regions and performing a hydrogen annealing process; and performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region.
1. A method for fabricating a device isolation comprising:
forming a shallow trench isolation structure on a semiconductor substrate;
forming a gate electrode and spacers on the sidewalls of the gate electrode;
implanting ions into source and drain regions;
performing a hydrogen annealing process; and
performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region,
wherein the hydrogen annealing process is performed both before and after the implanting ions into the source and drain regions such that plasma damage to edges of the gate electrode and the edges of the STI structure is reduced.
2. The method as defined by claim 1 , wherein the hydrogen annealing process is performed at a temperature between about 600° C. and about 800° C. for about 5 seconds to about 30 seconds, and with a gas rate between about 0.1 slm and about 30 slm.
3. A method for fabricating a device isolation comprising:
forming a shallow trench isolation structure on a semiconductor substrate;
forming a gate electrode and spacers on the sidewalls of the gate electrode;
implanting ions into source and drain regions;
performing a hydrogen annealing process, wherein the hydrogen annealing process is performed at a temperature between about 600° C. and about 800° C. for about 5 seconds to about 30 seconds, and with a gas rate between about 0.1 slm and about 30 slm; and
performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region,
wherein the hydrogen annealing process is performed before implanting ions into the source and drain regions such that plasma damage to edges of the gate electrode and the edges of the STI structure is reduced.