Devices and methods of preventing plasma charging damage in semiconductor devices
View Patent ↗Methods for protecting semiconductor devices from plasma charging damage are disclosed. An example disclosed method includes depositing an etching stop layer on a substrate with at least one predetermined structure; depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer; depositing an insulating layer on the surface of the resulting structure; and forming an metallic interconnect on the insulating layer.
1. A method for preventing plasma charging damages comprising:
sequentially forming a gate insulating layer, a gate electrode, and a source and drain region on a substrate;
depositing an etching stop layer on the substrate;
depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer, wherein the charge preservation layer comprises polysilicon;
depositing an insulating layer on the surface of the resulting structure; and
forming an metallic interconnect on the insulating layer.
2. The method as defined by claim 1 , wherein the etching stop layer comprises a silicon nitride layer.
3. The method as defined by claim 1 , wherein the premetallic dielectric layer comprises BPSG.
4. The method as defined by claim 1 , wherein the premetallic dielectric layer is deposited after the deposition of the charge preservation layer.
5. The method as defined by claim 1 , wherein the premetallic dielelectric layer is deposited before the deposition of the charge preservation layer.
6. The method as defined by claim 1 , wherein the charge preservation layer is deposited with a thickness between about 150 Å and about 1000 Å.
7. The method as defined by claim 1 , wherein the premetallic dielectric layer is deposited both before and after the deposition of the charge preservation layer.