Method of manufacturing a semiconductor device
View Patent ↗To provide a penetration electrode having high quality. A method of manufacturing a semiconductor device includes the following steps: (a) forming a concave part from a first face of a semiconductor substrate in which an integrated circuit is formed; (b) providing a resin layer at least on the bottom face of the concave part; (c) forming a conductive part to an inner side of the resin layer of the concave part; (d) disposing the resin layer from a second face opposite to the first face of the semiconductor substrate by wet etching; and (e) exposing the conductive part from the second face of the semiconductor substrate.
1. A method of manufacturing a semiconductor device comprising:
(a) forming a concave part from a first face of a semiconductor substrate in which an integrated circuit is formed;
(b) providing a resin layer at least on a bottom face of the concave part;
(c) forming a conductive part to an inner side of the resin layer of the concave part;
(d) exposing the resin layer from a second face opposite to the first face of the semiconductor substrate by wet etching; and
(e) exposing the conductive part from the second face of the semiconductor substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the resin layer is continuously provided from the bottom face to an inner wall of the concave part in the step of (b).
3. The method of manufacturing a semiconductor device according to claim 1 , wherein a material of the resin layer is provided by means of a droplet discharge method in the step of (b).
4. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming an insulation layer to an inner side of the resin layer of the concave part after the step of (b), wherein the conductive part is formed to an inner side of the insulation layer in the step of (c).
5. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
polishing the semiconductor substrate from the second face before the step of (d).
6. The method of manufacturing a semiconductor device according to claim 1 , wherein the step of (e) includes:
(e1) removing the resin layer; and
(e2) dry etching the semiconductor substrate from the second face.
7. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
dicing the semiconductor substrate, the semiconductor substrate including:
forming the integrated circuit in multiple numbers; and
forming the concave part corresponding to each integrated circuit.
8. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
stacking the semiconductor device in multiple numbers, each semiconductor device being electrically interconnected with the conductive part.
9. The method of manufacturing a semiconductor device according to claim 5 , wherein a material of the resin layer is provided by means of a droplet discharge method in the step of (b).
10. The method of manufacturing a semiconductor device according to claim 5 , further comprising:
forming an insulation layer to an inner side of the resin layer of the concave part after the step of (b), wherein the conductive part is formed to an inner side of the insulation layer in the step of (c).
11. The method of manufacturing a semiconductor device according to claim 5 , wherein the step of (e) includes:
(e1) removing the resin layer; and
(e2) dry etching the semiconductor substrate from the second face.