IP Library Granted Patent US 7,031,215
Granted Patent B2
US 7,031,215 · App. 11/031,437 · Granted Apr 18, 2006

Memory device and method having data path with multiple prefetch I/O configurations

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,031,215
App. No.
11/031,437
Granted
Apr 18, 2006
Kind
B2
Abstract

A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Claims (11)

1. A method of transferring data to a memory device in either a first operating mode or a second operating mode, the method comprising:

in the first operating mode:

transferring the data to each of N serial-to-parallel converters in the form of M bits of data applied in sequence to each of the N serial-to-parallel converters so that M sets of N-bit parallel data are applied to the N serial-to-parallel converters;

transferring the data from each of the N serial-to-parallel converters to the memory device in the form of one set of M-bit parallel data so that N×M bits of parallel data are collectively transferred to the memory device from the N serial-to-parallel converters; and

in the second operating mode:

transferring the data to each of 2N serial-to-parallel converters in the form of M bits of data applied in sequence to each of the 2N serial-to-parallel converters so that M sets of 2N-bit parallel data are applied to the 2N serial-to-parallel converters; and

transferring the data from each of the 2N serial-to-parallel converters to the memory device in the form of two sets of M/2-bit parallel data each so that a first set of N×M bits of parallel data are collectively transferred to the memory device from the 2N serial-to-parallel converters and a second set of N×M bits of parallel data are subsequently collectively transferred from the 2N serial-to-parallel converters.

2. The method of claim 1 wherein N is equal to 8 and M is equal to 8.

3. The method of claim 1 wherein the act of transferring the data from the N serial-to-parallel converters to the memory device in the first operating mode comprises executing a memory write operation, and wherein the act of transferring the data from each of the 2N serial-to-parallel converters to the memory device in the second operating mode comprises sequentially executing two memory write operations.

4. The method of claim 1 wherein the memory device comprises a dynamic random access memory device.

5. The method of claim 1 wherein the serial-to-parallel converters are integrally fabricated with the memory device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2010
From: MICRON TECHNOLOGY, INC.
To: ROUND ROCK RESEARCH, LLC
Reel/Frame 023786/0416 →