Semiconductor device and method for manufacturing the same
View Patent ↗There is provided a semiconductor device in which the junction strength of land portions and external terminals is increased, the disconnection of the external terminal is surely prevented, and the connection reliability is ensured over an extended period of time. An insulating resin layer which insulates metal wires from one another is formed on a semiconductor element, an end portion of the metal wire is connected to an electrode on the semiconductor element, the other end portion of the metal wire is connected to an external terminal to form a land, the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer, and a projection is provided on the top surface of a land portion of at least one of the lands. Because of this, after their soldering, the external terminal holds the perimeter of the projection on the land portion, so that the external terminal can be surely connected to the land portion. As a result, the semiconductor device which ensures their connection reliability over an extended period of time can be obtained.
1. A semiconductor device, wherein:
an insulating resin layer which insulates metal wires from one another is formed on a semiconductor element,
an end portion of the metal wire is connected to an electrode on the semiconductor element,
the other end portion of the metal wire is connected to an external terminal to form a land,
the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer,
a projection is provided on the top surface of at least one of the lands, and
the projection provided on the top surface of the land portion has a shape that at least a part of its upper portion overhangs its lower portion.
2. A semiconductor device, wherein:
an insulating resin layer which insulates metal wires from one another is formed on a semiconductor element,
an end portion of the metal wire is connected to an electrode on the semiconductor element,
the other end portion of the metal wire is connected to an external terminal to form a land,
the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer,
a projection is provided on the top surface of at least one of the lands, and
the projection provided on the top surface of the land portion has a shape that at least a part of its side has a reverse-tapered shape.
3. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a top surface in which the direction of its length is perpendicular to the perimeter of the semiconductor device being close to the land portion.
4. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a top surface in which a longitudinal axis along the direction of its length radiates from the center of the top surface of the semiconductor device.
5. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of at least one of the lands located on the diagonal lines of the semiconductor device has a cross-shaped or L-shaped top surface in which the two directions of its length are perpendicular to the perimeter of the semiconductor device being close to the land portion.
6. The semiconductor device of claim 1 or 2 , wherein the lands are positioned in plural lines inside the vicinity of the perimeter of the semiconductor device, the projection is provided on the top surface of the land portions positioned in at least a first line from the outermost line, and no projection is provided on the land portions positioned in at least a first line from the inmost line.
7. The semiconductor device of claim 1 or 2 , wherein the plural projections are arranged on the top surface of the land portion, and the direction of the length of their top surfaces is perpendicular to the perimeter of the semiconductor device being close to the land portion.
8. The semiconductor device of claim 1 or 2 , wherein the plural projections are arranged on the top surface of the land portion, and the direction of length of their top surfaces radiates from the center of the top surface of the semiconductor device.
9. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a shape that the direction of the length of its top surface is perpendicular to the perimeter of the semiconductor device being close to the land portion, and the short width of its top surface varies partway.
10. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a shape that the direction of the length of its top surface radiates from the center of the top surface of the semiconductor device, and the short width of the top surface of the projection varies partway.
11. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a crossshaped top surface having two directions of its length which are perpendicular to the perimeter of the semiconductor device being close to the land portion, and the short width of its top surface varies partway.
12. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a shape that many directions of the length of its top surface radiate, and the short widths of its top surface vary partway.
13. The semiconductor device of claim 1 or 2 , wherein the projection provided on the top surface of the land portion has a top surface whose corners are chamfered so as to have angles of at least 120° or are rounded.
14. The semiconductor device of claim 1 or 2 , wherein the top surface of the projection provided on the top surface of the land portion does not stick out from or contact the perimeter of the land portion or a resist opening on the land portion, and the projection is formed inside the perimeter of the land portion or the resist opening on the land portion.