IP Library Granted Patent US 7,547,505
Granted Patent B2
US 7,547,505 · App. 11/038,838 · Granted Jun 16, 2009

Methods of forming capping layers on reflective materials

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Quick Facts
Patent No.
US 7,547,505
App. No.
11/038,838
Granted
Jun 16, 2009
Kind
B2
Abstract

A reflective material is heated to reduce internal stress, and then a capping layer is formed over the reflective material. Heating the reflective material reduces the internal stress of the reflective material. Because the reflective material has reduced internal stress, a more continuous, stable and reliable capping layer is formed that is not subject to stress induced degradation over time due to the relaxing internal stress of the underlying reflective material. Thus, the capping layer remains intact and protects the reflective material residing beneath the capping layer from exposure to contaminants.

Claims (37)

1. A method of forming a capping layer over a multi-layer mirror element, the method comprising:

providing the multi-layer mirror element, at least a top portion of the multi-layer mirror element having internal stress;

heating at least the multi-layer mirror element, thereby reducing the internal stress of at least the top portion of the multi-layer mirror element; and

forming the capping layer over the multi-layer mirror element.

2. The method according to claim 1 , wherein providing the multi-layer mirror element comprises providing a multi-layer mirror element that has been formed in a first deposition chamber, wherein without removing the multi-layer mirror element from the first deposition chamber, the multi-layer mirror element is heated and the capping layer is formed over the multi-layer mirror element.

3. The method according to claim 1 , wherein heating at least the multi-layer mirror element reduces the internal stress of at least the top potion of the multi-layer mirror element by about 10% or greater.

4. The method according to claim 1 , wherein forming the capping layer comprises forming a capping layer comprising a noble metal or alloy, a ceramic material, a transition metal, or a metal oxide.

5. The method according to claim 1 , wherein the multi-layer mirror element comprises a reflective lithography mask.

6. The method according to claim 1 , wherein heating at least the multi-layer mirror element comprises heating at least the multi-layer mirror element to a temperature of about 300 degrees C. or less.

7. The method according to claim 1 , wherein the multi-layer mirror element comprises a substrate and a plurality of material layers disposed over the substrate, wherein the substrate and plurality of material layers have internal stress, and wherein heating at least the multi-layer mirror element comprises decreasing the internal stress of the substrate and the plurality of material layers.

8. A method of manufacturing a multi-layer mirror element, the method comprising:

providing a substrate;

forming a plurality of material layers over the substrate, the plurality of material layers comprising a first internal stress;

heating at least the plurality of material layers to reduce the first internal stress; and

forming a capping layer over the plurality of material layers.

9. The method according to claim 8 , further comprising forming a diffusion barrier over the plurality of material layers.

10. The method according to claim 8 , wherein forming the diffusion barrier comprises forming about 10 nm or less of boron carbide (B 4 C), C, B, Si, Be, Mg, or Al.

11. The method according to claim 8 , wherein forming the plurality of material layers is performed in a first deposition chamber, and wherein heating at least the plurality of material layers and forming the capping layer are performed in the first deposition chamber after forming the plurality of material layers without removing the substrate from the first deposition chamber.

12. The method according to claim 8 , wherein forming the plurality of material layers is performed in a first deposition chamber, further comprising moving the substrate to a second deposition chamber while protecting the plurality of material layers from oxidation, and wherein forming the capping layer is performed in the second deposition chamber.

13. The method according to claim 8 , wherein heating at least the plurality of material layers reduces the first internal stress of plurality of material layers by about 10% or greater.

14. The method according to claim 8 , wherein forming the capping layer comprises forming a capping layer comprising a noble metal or alloy, a ceramic material, a transition metal, or a metal oxide.

15. The. method according to claim 14 , wherein forming the capping layer comprises forming about 3 nm or less of Ru, Ru oxide, Zr, Pd, PdAu, SiC, MoSi 2 , or Yttrium Stabilized Zirconium (YSZ).

16. The method according to claim 8 , wherein heating at least the plurality of material layers comprises heating at least the plurality of material layers a temperature of about 300 degrees C. or less.

17. The method according to claim 8 , wherein heating at least the plurality of material layers comprises heating at least the plurality of material layers for a time period of about 30 minutes or greater.

18. The method according to claim 8 , wherein the multi-layer mirror element has an expected lifetime and a predicted stress level at the end of the expected lifetime, wherein heating at least the plurality of material layers comprises reducing the first internal stress to at least the predicted stress level at the end of the expected lifetime of the multi-layer mirror element.

19. The method according to claim 8 , wherein providing the substrate comprises providing a substrate having a second internal stress, wherein heating at least the plurality of material layers further comprises heating the substrate, and wherein heating the substrate comprises reducing the second internal stress.

20. The method according to claim 8 , wherein at least heating at least the plurality of material layers comprises exposing the plurality of material layers to an inert gas.

21. The method according to claim 20 , wherein exposing the plurality of material layers to the inert gas comprises exposing the plurality of material layers to Ar or N.

22. The method according to claim 8 , wherein forming the plurality of material layers comprises forming a diffusion barrier layer between each of the plurality of material layers.

23. A method of manufacturing a multi-layer mirror element of an extreme ultraviolet lithography (EUVL) system, the method comprising:

providing a substrate;

placing the substrate in a deposition chamber;

forming a plurality of material layers over the substrate, the plurality of material layers comprising a first internal stress;

heating at least the plurality of material layers, reducing the first internal stress; and

forming a capping layer over the plurality of material layers, wherein forming the plurality of material layers, heating at least the plurality of material layers, and forming the capping layer are performed in the deposition chamber without removing the substrate from the deposition chamber.

24. The method according to claim 23 , further comprising forming a diffusion barrier over the plurality of material layers, before or after heating at least the plurality of material layers.

25. The method according to claim 23 , wherein providing the substrate comprises providing a substrate with a second internal stress, wherein heating at least the plurality of material layers further comprises heating the substrate, wherein heating the substrate reduces the second internal stress.

Assignments (19)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2005
From: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
To: INFINEON TECHNOLOGIES AG
Reel/Frame 015679/0690 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2005
From: EDWARDS, NORA V.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 015670/0200 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2005
From: WURM, STEFAN
To: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
Reel/Frame 015670/0197 →