SiCOH dielectric material with improved toughness and improved Si-C bonding
View Patent ↗A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH 3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n linkage, where n is a defined above.
1. A dielectric material consisting of atoms of Si, C, O, and H, and optionally including one of F and N, and having a covalently bonded tri-dimensional random network structure including a reduced density of Si—O—Si reactive sites compared to other dielectric materials of a same dielectric constant also including atoms of Si, C, O and H and also having a covalently bonded tri-dimensional random network structure, said reduced density of Si—O—Si reactive sites is obtained by having Si—C bonding within said tri-dimensional network structure in which a fraction of the C atoms within said Si—C bonding is bonded as Si—CH 3 functional groups, and another fraction of the C atoms within said Si—C bonding is bonded as Si—R—Si, wherein R is —[CH 2 ] n — where n is 1 to 3, HC═CH, C═CH 2 , or C≡C, where n is as defined above, said dielectric material is prepared by providing at least a first precursor comprising a carbosilane or an alkoxycarbosilane molecule into a reactor chamber, and depositing said first precursor, wherein said depositing is selected from chemical vapor deposition, plasma enhanced chemical vapor deposition, high density plasma deposition and pulsed plasma enhanced chemical vapor deposition.
2. The dielectric material of claim 1 further comprising at least one of F and N.
3. The dielectric material of claim 1 wherein the fraction of the total carbon atoms in the material that is bonded as Si—R—Si is between 0.01 and 0.99.
4. The dielectric material of claim 1 wherein said material is dense or porous and has a cohesive strength in a dry ambient greater than about 6 J/m 2 and a dielectric constant less than about 3.2.
5. The dielectric material of claim 1 wherein said material is dense or porous and has a cohesive strength in a dry ambient greater than about 3 J/m 2 and a dielectric constant less than about 2.5.
6. The dielectric material of claim 1 wherein said material is dense or porous and has a cohesive strength greater than about 3 J/m 2 at a water pressure of 1570 Pa at 25° C. and a dielectric constant less than about 3.2.
7. The dielectric material of claim 1 wherein said material is dense or porous and has a cohesive strength greater than about 2.1 J/m 2 at a water pressure of 1570 Pa at 25° C. and a dielectric constant less than about 2.5.
8. The dielectric material of claim 1 wherein said material has a cohesive strength that lies in the shaded region of FIG. 2A or 2 B.
9. The dielectric material of claim 1 wherein R is selected from the group consisting of HC═CH, and C═CH 2 .
10. A dielectric material consisting of atoms of Si, C, O, and H, and optionally one of F and N, and having a covalently bonded tri-dimensional random network structure including a reduced density of Si—O—Si reactive sites compared to other dielectric materials of a same dielectric constant also including atoms of Si, C, O and H and also having a covalently bonded tri-dimensional random network structure, said reduced density of Si—O—Si reactive sites is obtained by having Si—C bonding within said tri-dimensional network structure in which a fraction of the C atoms within said Si—C bonding is bonded as Si—CH 3 functional groups, and another fraction of the C atoms within said Si—C bonding is bonded as Si—R—Si, wherein R is —[CH 2 ] n — where n is equal to 1 and wherein the total fraction of carbon atoms that are bonded as Si—CH 2 —Si is between 0.05 and 0.5 as measured by solid state NMR, said dielectric material is prepared by providing at least a first precursor comprising a carbosilane or an alkoxycarbosilane molecule into a reactor chamber, and depositing said first precursor, wherein said depositing is selected from chemical vapor deposition, plasma enhanced chemical vapor deposition, high density plasma deposition and pulsed plasma enhanced chemical vapor deposition.
11. The dielectric material of claim 1 wherein said dielectric material is non-porous.
12. A dielectric material consisting of atoms of Si, C, O, and H, and optionally one of F and N, and having a covalently bonded tri-dimensional random network structure including a reduced density of Si—O—Si reactive sites compared to other dielectric materials of a same dielectric constant also including atoms of Si, C, O and H and also having a covalently bonded tri-dimensional random network structure, said reduced density of SiOSi reactive sites is obtained by having Si—C bonding within said tri-dimensional network structure in which a fraction of the C atoms within said Si—C bonding is bonded as Si—CH 3 functional groups, and another fraction of the C atoms within said Si—C bonding is bonded as Si—R—Si, wherein R—[CH 2 ] n — where n is 1 to 3 and wherein the dielectric material has more carbon bonded in the R group bridging the Si atoms compared to Si—CH 3 bonding, said dielectric material is prepared by providing at least a first precursor comprising a carbosilane or an alkoxycarbosilane molecule into a reactor chamber, and depositing said first precursor, wherein said depositing is selected from chemical vapor deposition, plasma enhanced chemical vapor deposition, high density plasma deposition and pulsed plasma enhanced chemical vapor deposition.
13. A dielectric material consisting of atoms of Si, C, O, and H, and optionally including one of F and N, and having a covalently bonded tri-dimensional random network structure including a reduced density of Si—O—Si reactive sites compared to other dielectric materials of a same dielectric constant also including atoms of Si, C, O and H and also having a covalently bonded tri-dimensional random network structure, said reduced density of Si—O—Si reactive sites is obtained by having Si—C bonding within said tri-dimensional network structure in which a fraction of the C atoms within said Si—C bonding is bonded as Si—CH 3 functional groups, and another fraction of the C atoms within said Si—C bonding is bonded as Si—R—Si, wherein R —[CH 2 ] n — where n is 1 to 3, said dielectric material is prepared by providing at least a first precursor comprising a carbosilane or an alkoxycarbosilane molecule into a reactor chamber, and depositing said first precursor, wherein said depositing is selected from chemical vapor deposition, plasma enhanced chemical vapor deposition, high density plasma deposition and pulsed plasma enhanced chemical vapor deposition.