Patent Assignment
Reel/Frame 031940/0056
Assignment of Assignor's Interest
Recorded: 2014-01-10
Pages: 7
Assignor
INTERNATIONAL BUSINESS MACHINES CORPORATION
Executed: 2013-10-28
Assignee
INTEL CORPORATION
2200 MISSION COLLEGE BLVD., SANTA CLARA, CALIFORNIA, 95054
Covered Properties
(23)
An Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device
PCT:
PCT/US2003/019183 ↗
An Improved Method for Fabricating an Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Electronic Device Made
PCT:
PCT/US2005/009820 ↗
Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Electronic Device Containing the Same
Method for Fabricating an Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device
Voltage Island Design Planning
Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device
Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Electronic Device Containing the Same
Method for Fabricating an Ultralow Dielectric Constant Material
Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Electronic Device Made
Low Power Circuits with Small Voltage Swing Transmission, Voltage Regeneration, and Wide Bandwidth Architecture
Method to Improve Cache Capacity of Soi and Bulk
Highly Scalable Methods and Apparatus for Multiplexing Signals
Method for Fabricating an Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Electronic Device Made
Sicoh Dielectric Material with Improved Toughness and Improved Si-C Bonding
Sicoh Dielectric Material with Improved Toughness and Improved Si-C Bonding, Semiconductor Device Containing the Same, and Method to Make the Same
Low Power Circuits with Small Voltage Swing Transmission, Voltage Regeneration and Wide Bandwidth Architecture
Method for Fabricating an Ultralow Dielectric Constant Material as an Intralevel or Interlevel Dielectric in a Semiconductor Device and Electronic Device Made
SiCOH dielectric
Application:
11/336,726 →
Publication:
US 2007/0173071
SiCOH DIELECTRIC
Application:
12/133,043 →
Publication:
US 2008/0265381
High Speed Clock Signal Duty Cycle Adjustment
A Method of Fabricating a Sicoh Dielectric Material with Improved Toughness and Improved Si-C Bonding
SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME
Application:
12/986,531 →
Publication:
US 2011/0101489
Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and device made
Application:
60/243,169 →
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 5, 2013
From: LIN, QINGHUANG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 029757/0772 →
Assignment of Assignor's Interest
Sep 26, 2013
From: AFZALI-ARDAKANI, ALI; GATES, STEPHEN M.; GRILL, ALFRED; NEUMAYER, DEBORAH A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 031286/0595 →
Assignment of Assignor's Interest
Sep 26, 2013
From: AFZALI-ARDAKANI, ALI; GATES, STEPHEN M.; GRILL, ALFRED; NEUMAYER, DEBORAH A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 031286/0709 →
Assignment of Assignor's Interest
Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →
Assignment of Assignor's Interest
May 29, 2025
From: MAY PATENTS LTD.
To: SMART SPEAKER LLC
Reel/Frame 071256/0346 →