Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding
View Patent ↗A method of fabricating a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided. The method includes the deposition of the dielectric material from a first precursor which is an carbosilane or an alkoxycarbosilane molecule.
1. A method of fabricating a SiCOH dielectric material comprising:
placing a substrate into a reactor;
providing at least a first gas precursor containing atoms of Si, C, O and H, said first gas precursor comprising a carbosilane or alkoxycarbosilane molecule containing Si—CH 2 —Si bonding; and
depositing a dielectric film derived from said first gas precursor by chemical vapor deposition onto said substrate by selecting conditions that are effective in providing a SiCOH dielectric having dielectric constant of 3.2 or less, wherein the dielectric film comprises at least atoms of Si, C, O, H and has a covalently bonded tri-dimensional network structure in which a fraction of the C atoms are bonded as Si—CH 3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n linkage, where n is a defined above.
2. The method of claim 1 wherein said first gas precursor is a cyclic carbosilane molecule in which bonds forming the cyclic portion of the molecule include both Si—CH 2 —Si bonds and at least one Si-bond.
3. The method of claim 2 wherein said first gas precursor is a derivative of disilacyclooctane, tetrasilacyclooctane, disilacyclohexane, or silacyclohexane.
4. The method of claim 2 wherein said first gas precursor comprises one of octamethyl-1,5-disiloxane-3,7-disilacyclooctane, 1,3,5,7-tetramethyl-1,5-disiloxane-3,7-disilacyclooctane, 1,3,5,7-tetramethyl-1,3,5,7-tetrasilacyclooctane, 1,3,5-trimethyl-1,3,5-trisilacyclohexane, 1,3,5-trimethyl-1,3-disiloxane-5-silacyclohexane, or 1,3,5-trimethyl-1-siloxane-3,5-disilacyclohexane.
5. The method of claim 2 further comprising adding a porogen precursor to said first gas precursor.
6. The method of claim 2 further comprising treating said deposited dielectric film with at least one energy source which comprises a thermal energy source, UV light, electron beam, chemical, microwave or plasma.
7. The method of claim 6 wherein the at least one energy source is a UV light, that may be pulsed or continuous, and said step of treating is performed at a substrate temperature from 300°-450° C., and with light that includes at least a UV wavelength between 150-370 nm.
8. The method of claim 2 further comprising a step of applying a source of energy to said reactor between said providing and depositing steps.
9. The method of claim 2 further comprising adding at least one of an inert gas or an oxidizing agent to said first gas precursor.
10. The method of claim 1 wherein said first gas precursor is selected from the group consisting of octamethyl-1,5-disiloxane-3,7-disilacyclooctane, 1,3,5,7-tetramethyl-1,5-disiloxane-3,7-disilacyclooctane, 1,3,5,7-tetramethyl-1,3,5,7-tetrasilacyclooctane, 1,3,5-trimethyl-1,3,5-trisilacyclohexane, 1,3,5-trimethyl-1,3-disiloxane-5-silacyclohexane, 1,3,5-trimethyl-1-siloxane-3,5-disilacyclohexane, 1,1,3,3,-tetrahydrido-1,3-disilacyclobutane, 1,1,3,3-tetramethoxy(ethoxy)-1,3 disilacyclobutane, 1,3-dimethyl-1,3-dimethoxy-1,3 disilacyclobutane, 1,3-disilacyclobutane, 1,3-dimethyl-1,3-dihydrido-1,3-disilylcyclobutane, 1,1,3,3, tetramethyl-1,3-disilacyclobutane, 1,1,3,3,5,5-hexamethoxy-1,3,5-trisilane, 1,1,3,3,5,5-hexahydrido-1,3,5-trisilane, 1,1,3,3,5,5-hexamethyl-1,3,5-trisilane, 1,1,1,3,3,3-hexamethoxy(ethoxy)-1,3-disilapropane, 1,1,3,3-tetramethoxy-1-methyl-1,3-disilabutane, 1,1,3,3-tetramethoxy-1,3-disilapropane, 1,1,1,3,3,3-hexahydrido-1,3-disilapropane, 3-(1,1-dimethoxy-1-silaethyl)-1,4,4-trimethoxy-1-methyl-1,4-disilpentane, methoxymethane, 2-(dimethoxysilamethyl)-1,1,4-trimethoxy-1,4-disilabutane, methoxymethane, 1,1,4-trimethoxy-1,4-disila-2-(trimethoxysilylmethyl)butane, dimethoxymethane, methoxymethane, 1,1,1,5,5,5-hexamethoxy-1,5-disilapentane, 1,1,5,5-tetramethoxy-1,5-disilahexane, 1,1,5,5-tetramethoxy-1,5-disilapentane, 1,1,1,4,4,4-hexamethoxy(ethoxy)-1,4-disilylbutane, 1,1,1,4,4,4,-hexahydrido-1,4-disilabutane, 1,1,4,4-tetramethoxy(ethoxy)-1,4-dimethyl-1,4-disilabutane, 1,4-bis-trimethoxy(ethoxy)silyl benzene,1,4-bis-dimethoxymethylsilyl benzene, 1,4-bis-trihydrosilyl benzene, 1,1,1,4,4,4-hexamethoxy(ethoxy)-1,4-disilabut-2-ene, 1,1,1,4,4,4-hexamethoxy(ethoxy)-1,4-disilabut-2-yne, 1,1,3,3-tetramethoxy(ethoxy)-1,3-disilolane, 1,3-disilolane, 1,1,3,3-tetramethyl-1,3-disilolane, 1,3,3-tetramethoxy(ethoxy)-1,3-disilane, 1,3-dimethoxy(ethoxy)-1,3-dimethyl-1,3-disilane, 1,3-disilane, 1,3-dimethoxy-1,3-disilane, 1,1-dimethoxy(ethoxy)-3,3-dimethyl-1-propyl-3-silabutane, and 2-silapropane.
11. The method of claim 1 further comprising treating said deposited dielectric film with at least one energy source which comprises a thermal energy source, UV light, electron beam, chemical, microwave or plasma.
12. The method of claim 11 wherein the at least one energy source is a UV light, that may be pulsed or continuous, and said step of treating is performed at a substrate temperature from 300°-450° C., and with light that includes at least a UV wavelength between 150-370 nm.
13. The method of claim 1 further comprising a step of adjusting a temperature of the substrate prior to providing said first gas precursor.
14. The method of claim 1 further comprising a step of applying a source of energy to said reactor between said providing and depositing steps.
15. The method of claim 1 further comprising providing a second precursor that comprises atoms of C, H and optionally at least one of O, F or N and Ge.
16. The method of claim 1 further comprising adding a porogen precursor to said first gas precursor.
17. The method of claim 1 further comprising adding at least one of an inert gas or an oxidizing agent to said first gas precursor.
18. The method of claim 1 further comprising providing a second precursor comprised of atoms of Si, C, O and H and selected from the group consisting of diethoxymethylsilane, dimethyldimethoxysilane, octamethylcyclotetrasiloxane, tetramethylcyclotetrasiloxane, vinylmethyldiethoxysilane, vinyltriethoxysilane, vinyldimethylethoxysilane, cyclohexenylethyltriethoxysilane, 1,1-diethoxy-1-silacyclopent-3-ene, divinyltetramethyldisiloxane, 2-(3,4-epoxycyclohexyl)ethyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, epoxyhexyltriethoxysilane, hexavinyldisiloxane, trivinylmethoxysilane, trivinylethoxysilane, vinylmethylethoxysilane, vinylmethyldiethoxysilane, vinylmethyldimethoxysilane, vinylpentamethyldisiloxane, vinyltetramethyldisiloxane, vinyltriethoxysilane, and vinyltrimethoxysilane.
19. The method of claim 1 wherein said first gas precursor is an alkoxycarbosilane, said alkoxycarbosilane having a structural formula of:
in which R1-R6 may be the same or different and are selected from the group consisting of H, —CH 3 , —OCH 3 and —OCH 2 CH 3 .
20. The method of claim 1 wherein said first gas precursor is an alkoxycarbosilane, said alkoxycarbosilane having a structural formula of:
in which R1-R6 are —CH 3 or —OCH 3 .
21. The method of claim 1 wherein said first gas precursor is an alkoxycarbosilane, said alkoxycarbosilane having a structural formula of:
in which R1, R2, R3 and R4 are —CH 3 , and R5 and R6 are —OCH 3 .
22. The method of claim 1 wherein said first gas precursor is an alkoxycarbosilane, said alkoxycarbosilane having a structural formula of:
in which R1, R2, R4 and R5 are H or —CH 3 , and R3 and R6 are —OCH 3 .
23. A method of fabricating a SiCOH dielectric material comprising:
placing a substrate into a reactor;
providing at least a first gas precursor containing atoms of Si, C, O and H, said first gas precursor comprising a cyclic carbosilane molecule in which bonds forming the cyclic ring comprise both Si—CH 2 —Si bonds and at least one Si-bond; and
depositing by chemical vapor deposition a dielectric film derived from said first gas precursor onto said substrate by selecting conditions that are effective in providing a SiCOH dielectric having dielectric constant of 3.2 or less, wherein the dielectric film comprises at least atoms of Si, C, O, H and has a covalently bonded tri-dimensional network structure in which a fraction of the C atoms are bonded as Si—CH 3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C≡C or a [S] n linkage, where n is a defined above.
24. The method of claim 23 wherein said first gas precursor comprises one of octamethyl-1,5-disiloxane-3,7-disilacyclooctane, 1,3,5,7-tetramethyl-1,5-disiloxane-3,7-disilacyclooctane, 1,3,5,7-tetramethyl-1,3,5,7-tetrasilacyclooctane, 1,3,5-trimethyl-1,3,5-trisilacyclohexane, 1,3,5-trimethyl-1,3-disiloxane-5-silacyclohexane, or 1,3,5-trimethyl-1-siloxane-3,5-disilacyclohexane.