Field effect type semiconductor device
A field effect type semiconductor device is disclosed wherein a channel is easily depleted just under a gate electrode to implement an E-mode, but a channel is hard to be depleted just under a gate recess region so that the transconductance gm and the cutoff frequency f T can be set to sufficiently high values. The present device includes a first etching stop layer Schottky contacting with an end face of the gate electrode and a second etching stop layer extending to a position in the proximity of a side face of the gate electrode. The first etching stop layer is formed from a material which is easily depleted (one of materials of a group including InAlP, InP, InAsP, InSbP, InAlAsP, and InAlSbP), and the second etching stop layer is formed from a material which is hard to be depleted (one of materials of a group including InGaP, InGaAsP, InGaSbP).
1. A field effect type semiconductor device, comprising:
a gate electrode;
a first etching stop layer Schottky contacting with an end face of said gate electrode; and
a second etching stop layer formed on said first etching stop layer, contacting with a side face of said gate electrode;
said first etching stop layer being formed from InAlP;
said second etching stop layer being formed from one of materials of the group consisting of InGaP, InGaAsP, and InGaSbP;
said field effect type semiconductor device being an enhancement mode field effect type semiconductor device.
2. The field effect type semiconductor device as claimed in claim 1 , further comprising an electron supplying layer and a channel layer; wherein said first etching stop layer is formed on said electron supplying layer, and said electron supplying layer is formed on said channel layer.
3. The field effect type semiconductor device as claimed in claim 2 , wherein said electron supplying layer is formed from InAlAs or InAlAsSb, and said channel layer is formed from InGaAs, InAlGaAs, InAs, InP or a multilayer structure formed from two or more of InGaAs, InAlGaAs, InAs, and InP.
4. The field effect type semiconductor device as claimed in claim 1 , further comprising another gate electrode Schottky contacting with said second etching stop layer.
5. The field effect type semiconductor device as claimed in claim 1 , wherein said gate electrode has a T-shaped cross sectional shape or Y-shaped cross sectional shape.