Very low cost surface emitting laser diode arrays
An array of semiconductor lasers on a single semiconductive die. The die includes a plurality of laser stripes optically coupled to a reflective surface. The laser stripes generate a plurality of laser beams traveling in a direction essentially parallel to a top surface of the die. The reflective surface redirects the laser beams to emit in a direction essentially perpendicular to the top surface. Alternatively, the reflective surface may redirect the laser beams to emit from a bottom surface of the die. The reflective surface can be formed by etching a vicinally oriented III-V semiconductive die so that the reflecting surface extends along a (111)A crystalline plane of the die.
1 . An array of semiconductor lasers, comprising:
a semiconductive die that includes;
a plurality of laser stripes; and,
a reflective surface optically coupled to said laser stripes and located along a (111)A crystalline plane of said semiconductive die.
2 . The array of claim 1 , wherein said semiconductive die is fabricated from III-V compound semiconducting crystals.
3 . The array of claim 1 , wherein a surface of said semiconductive die is located at an angle relative to a (100) crystalline plane of said semiconductive die.
4 . The array of claim 1 , wherein said reflective surface is located at a 45 degree angle relative to a surface of said semiconductor die.
5 . The array of claim 1 , further comprising a heat sink that is attached to said semiconductive die and said reflective surface reflects light through a substrate of said semiconductive die.
6 . The array of claim 1 , wherein said reflective surface is located along a groove that extends across a portion of a surface of said semiconductive die.
7 . The array of claim 1 , further comprising a plurality of lenses coupled to said reflective surface.
8 . The array of claim 7 , wherein said lenses are collimating lenses.
9 . An array of semiconductor lasers, comprising:
a semiconductive die that has a surface and includes;
laser means for generating a plurality of laser beams; and,
reflection means for reflecting the laser beams so that the laser beam exits the semiconductive die from said surface.
10 . The array of claim 9 , wherein said semiconductive die is fabricated from a III-V semiconducting crystal.
11 . The array of claim 9 , wherein said surface is located at an angle relative to a (100) crystalline plane of said semiconductive die.
12 . The array of claim 9 , wherein said reflection means includes a reflective surface that is located at a 45 degree angle relative said surface of said semiconductor die.
13 . The array of claim 9 , further comprising a heat sink that is attached to said semiconductive die and said reflection means reflects light through a substrate of said semiconductive die.
14 . The array of claim 9 , wherein said reflection means includes a reflective surface that is located along a groove which extends across a portion of said surface of said semiconductive die.
15 . The array of claim 9 , further comprising lens means coupled to said reflection means.
16 . The array of claim 15 , wherein said lens means includes at least one collimating lens.
17 . A method for operating an array of semiconductor lasers, comprising:
generating a plurality of laser beams; and,
reflecting the laser beams from a reflective surface of a semiconductive die 90 degrees so that the laser beams exit a surface of the semiconductor die, the reflective surface being located along a (111)A crystalline plane of the semiconductive die.
18 . The method of claim 17 , wherein the laser beams are reflected from a top surface of the semiconductive die.
19 . The method of claim 17 , wherein the laser beams are reflected through a substrate of the semiconductive die.
20 . A method for fabricating an array of semiconductor lasers, comprising:
forming a plurality of laser stripes on a semiconductive wafer;
forming a mask on a portion of a semiconductive wafer such that there is an unmasked portion of the semiconductive wafer;
etching the unmasked portion of the semiconductive wafer to create a reflective surface that extends along a (111)A crystalline plane of the semiconductive wafer; and,
cutting a semiconductive die that contains at least two laser stripes and said reflective surface from the semiconductive wafer.
21 . The method of claim 20 , wherein the semiconductive wafer is fabricated with III-V compound semiconducting crystals.
22 . The method of claim 20 , further comprising cutting the semiconductive wafer so that a surface of the semiconductive wafer is located at an angle relative to a (100) crystalline plane of the semiconductive wafer.
23 . The method of claim 20 , further comprising attaching a heat sink to the semiconductive die.
24 . The method of claim 23 , further comprising forming an opening in a substrate of the semiconductive die.
25 . The method of claim 20 , further comprising coupling a plurality of lenses to the reflective surface.
26 . The method of claim 25 , wherein the lenses are collimating.