Semiconductor device with fuse wires and connection wires
View Patent ↗A semiconductor device wherein return wires corresponding to a plurality of fuse wires are arranged collectively in the same region. Moreover, the return wires are arranged in multiple layers. This arrangement creates a region where no return wire is disposed between the fuse wires, thereby permitting an arrangement of the fuse wires at the minimum wiring pitch. Alternatively, the semiconductor device may include fuse strings arranged in a plurality of stages and a plurality of connection wires for supplying signals to the fuse strings in the plurality of stages, respectively, wherein connection wires for other fuse strings are arranged in a region between adjacent fuse strings.
1. A semiconductor device, comprising:
a plurality of fuse wires arranged next to one another in a first direction, each of said fuse wires extending in a second direction; and
a plurality of connection wires connected correspondingly to the plurality of fuse wires,
wherein first and second connection wires of the plurality of connection wires are connected to an adjacent two of the fuse wires and are arranged to pass between the adjacent two of the fuse wires in the second direction and are overlapped with each other with an intervention of insulation therebetween.
2. The semiconductor device according to claim 1 , wherein said connection wires are arranged in multiple layers.
3. The semiconductor device according to claim 1 , wherein said fuse wires are arranged at a first pitch in a region where said connection wires are arranged between the adjacent fuse wires and said fuse wires are arranged at a pitch narrower than the first pitch in a region where said connection wires are not arranged between the adjacent fuse wires.
4. The semiconductor device according to claim 1 , wherein said plurality of fuse wires and said plurality of connection wires are provided in one opening.
5. The semiconductor device according to claim 1 , wherein said connection wires are arranged in a same pitch within a same layer.
6. A semiconductor device, comprising:
a common wire;
a plurality of first fuse wires arranged in a region on one side of said common wire;
a plurality of second fuse wires arranged in a region on the other side of said common wire;
circuit blocks arranged in the first region and connected to said fuse wires; and
a plurality of return wires for connecting said circuit blocks to said plurality of second fuse wires correspondingly,
wherein said plurality of first fuse wires are arranged at a first pitch and a second pitch narrower than the first pitch, without an arrangement of said return wires between the fuse wires arranged at the second pitch, but with an arrangement of said return wires between the fuse wires arranged at the first pitch, and
wherein two of said return wires are connected respectively to an adjacent two of the second fuse wires, said two return wires pass between said adjacent two of the second fuse wires, and said two return wires are overlapped vertically with each other with respect to a substrate.
7. The semiconductor device according to claim 6 , wherein said plurality of return wires are formed in layers different from said fuse wires.
8. The semiconductor device according to claim 6 , wherein a part of said plurality of return wires are formed in the same layer as said fuse wires and wherein a remaining part of said plurality of return wires are formed in a different layer from said fuse wires.
9. A semiconductor device, comprising:
a first wire provided in an extended condition in a first direction;
first and second connection wires extending in a second direction perpendicular to said first direction, the first and second connection wires overlaping with each other in a vertical direction to a substrate with an intervention of insulation therebetween so that, in a plan view of the device, at least a part of one of said connection wires is behind another one of said connection wires; and
second and third wires extending in the second direction and sandwiching the first and second connection wires therebetween, the second and third wires being electrically connected to the first and second connection wires respectively.
10. A semiconductor device, comprising:
at least three fuse strings arranged in a plurality of stages; and
at least three connection wires for supplying signals to said fuse strings in the plurality of stages, respectively,
wherein said at least three connection wires are arranged in a region between an adjacent two of the at least three fuse strings and said at least three connection wires are overlapped with one another in a vertical direction to a substrate.
11. The semiconductor device according to claim 10 , wherein,
said fuse strings are arranged in a first direction,
each of said fuse strings runs in a second direction, and
said connection wires run in said second direction.