Granted Patent B2

US 7,923,306 · App. 11/052,000 · Granted Apr 12, 2011

Abstract

Claims (42)

1. A method for selectively irradiating structures on or within a semiconductor substrate using a plurality of pulsed laser beams, the structures being substantially straight strip-shaped objects having a length, a substantially uniform width and a depth, the structures being arranged in a row extending in a generally lengthwise direction that is perpendicular to a direction in which the objects' lengths are measured, the method comprising:

generating a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate;

generating a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate;

directing respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row, wherein the first and second laser beam axes intersect the semiconductor substrate at respective first and second spots, and wherein the first and second spots are purposefully offset from each other by a deliberate amount in the direction in which the objects' lengths are measured; and

moving the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

2. The method of claim 1 , wherein the first and second pulses are delivered simultaneously to the first and second structures respectively.

3. The method of claim 1 , wherein the structures comprise electrically conductive links and irradiation of a link results in severing that link.

4. The method of claim 1 , wherein the structures comprise potential electrically conductive links and irradiation of a link results in making an electrical connection in that link.

5. The method of claim 1 , wherein the first and second structures are not adjacent.

6. The method of claim 5 , wherein the first and second structures are separated by a distance sufficient to avoid a deleterious concentration of energy absorbed by the semiconductor substrate in the vicinity of the first and second structures.

7. The method of claim 5 , wherein there is more than one structure between the first and second structures.

8. The method of claim 7 , wherein the number of structures between the first and second structures is an even number.

9. The method of claim 1 , wherein the first and second spots are separated by a distance sufficient to avoid a deleterious concentration of energy absorbed by the semiconductor substrate between the first and second spots.

10. The method of claim 1 , further comprising:

generating a third laser beam that propagates along a third laser beam axis that intersects the semiconductor substrate; and

directing the third laser beam onto a structure in the row.

11. The method of claim 1 , wherein the first and second laser beams have respective first and second sets of optical properties, and wherein the first and second sets are different from one another.

12. The method of claim 1 , wherein the steps of generating the laser beams comprise:

generating the first and second laser beams from two respective lasers.

13. The method of claim 1 , wherein the steps of generating the laser beams comprise:

generating a single laser beam from a single laser; and

splitting the single laser beam to form the first and second laser beams.

14. The method of claim 1 , wherein the steps of generating the first and second laser beams are commenced based upon a trigger signal.

15. The method of claim 14 , wherein the trigger signal is generated based upon a timing signal.

16. The method of claim 14 , wherein the trigger signal is generated based upon a comparison of one or more desired target locations and the positions of one or more of the first and second laser beam axes on the semiconductor substrate.

17. The method of claim 1 , further comprising:

selectively blocking the first laser beam from reaching the semiconductor substrate; and

selectively blocking the second laser beam from reaching the semiconductor substrate.

18. The method of claim 1 , further comprising:

during the moving step, dynamically adjusting the relative spacing between the first and second spots.

19. The method of claim 18 , wherein the adjustment of the relative spacing is in the lengthwise direction of the row.

20. The method of claim 1 , wherein the moving step comprises:

moving the laser beam axes.

21. The method of claim 1 , wherein the moving step comprises:

moving the semiconductor substrate.

22. The method of claim 5 , wherein the semiconductor substrate comprises a number of dice having a substantially equal dice spacing between corresponding parts of adjacent dice, wherein the first and second laser beam axes intersect the semiconductor substrate at respective first and second spots, and wherein the first and second spots are offset from one another by some amount in the lengthwise direction of the row, wherein said amount is equal to a non-zero integer multiple of said dice spacing.

23. The method of claim 1 , further comprising:

adjusting a size of the first laser beam independently of the second laser beam; and

adjusting a size of the second laser beam independently of the first laser beam.

24. The method of claim 1 , further comprising:

propagating the first laser beam through a first lens that focuses the first laser beam on or within the semiconductor substrate; and

propagating the second laser beam through a second lens that focuses the second laser beam on or within the semiconductor substrate, wherein the second lens is different from the first lens, wherein the first laser beam does not propagate through the second focus lens, and wherein the second laser beam does not propagate through the first focus lens.

Assignments (8)