Semiconductor device
View Patent ↗Described herein is a stacked package according to the present invention, wherein a plurality of tape carriers which seal semiconductor chips, are multilayered in upward and downward directions. In the stacked package, one ends of leads formed over the whole surfaces of each tape carrier are electrically connected to their corresponding connecting terminals of the semiconductor chip. Other ends of the leads are electrically connected to their corresponding through holes defined in the tape carrier. Connecting terminals common to the plurality of semiconductor chips are formed at the same places of the plurality of tape carriers and withdrawn to the same external connecting terminals through a plurality of mutually-penetrated through holes.
1. A semiconductor device comprising:
an insulating base having a first surface and a second surface opposite to said first surface;
a first semiconductor chip having a central processing unit and first connection terminals formed on a main surface thereof, said first semiconductor chip being disposed on said first surface of said insulating base;
a second semiconductor chip having a memory circuit and second connection terminals formed on a main surface thereof, said second semiconductor chip being stacked on said first semiconductor chip;
bump electrodes disposed on said second surface of said insulating base;
first conductors electrically connected to second conductors so as to electrically connect said first connection terminals of said first semiconductor chip with said bump electrodes;
third conductors electrically connected to said second conductors so as to electrically connect said second connection terminals of said second semiconductor chip with said bump electrodes; and
a mold resin sealing said first and second semiconductor chips;
wherein a total number of said first connection terminals of said first semiconductor chip is larger than that of said second connection terminals of said second semiconductor chip.
2. A semiconductor device according to claim 1 , wherein said memory circuit of said second semiconductor chip includes a DRAM circuit which includes a plurality of MOS transistors each including a capacitor coupled to one of source and drain regions thereof.
3. A semiconductor device according to claim 1 , wherein a size of said first semiconductor chip is larger than that of said second semiconductor chip in a plan view.
4. A semiconductor device according to claim 3 , wherein said main surface of said first semiconductor chip has a tetragonal shape, and wherein said first connection terminals are arranged along four sides of said tetragonal shape.
5. A semiconductor device according to claim 1 , wherein each of said first conductors includes a bonding wire and a wiring layer which is formed on said insulating base and is connected to one end of said bonding wire.
6. A semiconductor device according to claim 5 , wherein said insulating base has through holes extending from said first surface to said second surface, and wherein said bump electrodes are electrically connected to said wiring layers via said second conductors in said through holes.
7. A semiconductor device according to claim 6 , wherein said insulating base is formed of a polyimide tape.