IP Library Granted Patent US 7,492,091
Granted Patent B2
US 7,492,091 · App. 11/061,143 · Granted Feb 17, 2009

Diffusion barrier layer and method for manufacturing a diffusion barrier layer

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,492,091
App. No.
11/061,143
Granted
Feb 17, 2009
Kind
B2
Abstract

A diffusion barrier system for a display device comprising a layer system with at least two layers of dielectric material, wherein at least two adjacent layers of that layer system comprise the same material. A respective method for manufacturing such a diffusion barrier system in a single process chamber of a plasma deposition system has the steps of introducing a substrate to be treated in said process chamber, discretely varying in a controlled manner during deposition at least one process parameter in the process chamber, without completely interrupting such process parameter, which results in layers with different properties and finally unloading said substrate from said process.

Claims (6)

1. A diffusion barrier or encapsulation layer system comprising an inorganic layer system of dielectric material, with at least two adjacent layers of that inorganic layer system comprising the same material, said dielectric material being one of a nitride, oxide, carbide and oxynitride and combinations thereof of a metal or a semiconductor, wherein said inorganic layer system comprises at least four layers exhibiting a water vapor transition rate of or less than 5.66×10 −4 g/m 2 /day at 20° C. and 50% humidity.

2. Diffusion barrier or encapsulation layer system according to claim 1 , wherein the metal is one of Al, Cr, Cu, Ge, In, Ir Sb, Sn, Ta, Ti, Zr or combinations thereof.

3. Diffusion barrier or encapsulation layer system according to claim 1 , wherein the dielectric material comprises silicon nitride or silicon oxynitride (SiO x N y ).

4. Diffusion barrier or encapsulation layer system according to claim 1 wherein each layer in said system has a layer thickness is in the range of 15-100 nm.

5. Display device comprising a substrate chosen from the group of glass, metal, polymer or paper with a diffusion barrier system according to claim 1 .

6. Display device according to claim 5 , further comprising a organic light emitting diode layer.

Assignments (7)
LICENSE Recorded Aug 1, 2014
From: TEL SOLAR AG
To: OC OERLIKON BALZERS AG
Reel/Frame 033459/0821 →
CHANGE OF NAME Recorded Aug 16, 2013
From: OERLIKON SOLAR AG, TRUBBACH
To: TEL SOLAR AG
Reel/Frame 031029/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2010
From: OC OERLIKON BALZERS AG
To: OERLIKON SOLAR AG, TRUBBACH
Reel/Frame 025459/0849 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 26, 2009
From: OC OERLIKON BALZERS AG
To: OERLIKON TRADING AG, TRUBBACH
Reel/Frame 022151/0148 →
CHANGE OF NAME Recorded Jan 22, 2009
From: UNAXIS BALZERS AG
To: OC OERLIKON BALZERS AG
Reel/Frame 022137/0241 →
CHANGE OF NAME Recorded Dec 2, 2008
From: UNAXIS BALZERS LTD
To: OC OERLIKON BALZERS AG
Reel/Frame 021910/0788 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 28, 2005
From: QUOC, HAI TRAN; KHARRAZI-OLSSON, MARYAM; GALLISSIAN, ALICE
To: UNAXIS BALZERS LTD.
Reel/Frame 015959/0295 →