Ball grid array package with improved thermal characteristics
View Patent ↗An integrated circuit package includes a substrate having first and second surfaces and a plurality of conductive traces therebetween and a semiconductor die mounted on the first surface of the substrate. A plurality of wire bonds connect the semiconductor die to ones of the conductive traces of the substrate and an encapsulant encapsulates the wirebonds and the semiconductor die. A heat spreader has a cap, at least a portion of the cap extending inwardly toward and being spaced from the semiconductor die. The encapsulant fills the space between the portion of the cap and the semiconductor die. The heat spreader further has at least one sidewall extending from the cap, the at least one sidewall disposed on the substrate. A ball grid array is disposed on the second surface of the substrate, bumps of the ball grid array being in electrical connection with ones of the conductive traces.
1. A process for manufacturing an integrated circuit comprising:
mounting a semiconductor die to a first surface of a substrate;
wire bonding said semiconductor die to ones of conductive traces of said substrate;
fixing at least one ground pad to said substrate;
encapsulating the wire bonds and said semiconductor die in a glob-top encapsulant material;
disposing over said glob-top encapsulant material a heat spreader having a cap protruding therefrom, the heat spreader having at least one sidewall extending from the cap;
embedding the cap into the glob-top encapsulant material while the glob-top encapsulant is in an uncured state such that the cap extends inwardly from the heat spreader and is spaced apart from the semiconductor die, the cap and the semiconductor die defining a space disposed therebetween, the space being completely filled by the glob-top encapsulant material;
fixing said at least one sidewall to said at least one ground pad, an outer surface of the heat spreader is exposed to the surrounding environment and an inner surface of the at least one sidewall being spaced apart from the encapsulant material; and
forming a ball grid array on a second surface of said substrate, bumps of said ball grid array being electrically connected to said conductive traces.
2. The process according to claim 1 , wherein said encapsulating the wire bonds and said semiconductor die comprises depositing a liquid dam on a top surface of said substrate and encapsulating said wire bonds and said semiconductor die in the glob-top encapsulant material.
3. The process according to claim 1 , wherein said mounting a heat spreader comprises fixing at least one sidewall to the substrate.
4. The process according to claim 1 , wherein said mounting a heat spreader comprises fixing four sidewalls that extend from said cap to said substrate.
5. The process according to claim 1 , further comprising forming said heat spreader to provide said portion that extends inwardly, prior to mounting said heat spreader.
6. The process according to claim 1 , further comprising etching said heat spreader such that said portion of said cap has a thickness that is greater than a remainder of said heat spreader, prior to mounting said heat spreader.
7. The process according to claim 1 , further comprising, fixing a heat slug to said cap of said heat spreader.
8. The process according to claim 1 , wherein said mounting said heat spreader comprises fixing said at least one sidewall to at least one of said conductive traces of said substrate.
9. A process for manufacturing an integrated circuit comprising:
mounting a semiconductor die to a first surface of a substrate;
wire bonding said semiconductor die to ones of conductive traces of said substrate;
mounting a ground pad on said substrate;
encapsulating the wire bonds and said semiconductor die in a glob-top encapsulant;
disposing over said glob-top encapsulant material a single piece heat spreader having a cap protruding therefrom, the single piece heat spreader having at least one sidewall extending from the cap;
embedding the cap into the glob-top encapsulant material while the glob-top encapsulant material is in an uncured state such that the cap extends inwardly from the single piece heat spreader and is spaced apart from the semiconductor die by a distance in the range of about 4 to about 16 mils, the cap and the semiconductor die defining a space disposed therebetween, the space being completely filled by the glob-top encapsulant material and an outer surface of the single piece heat spreader being exposed to the surrounding environment; and
forming a ball grid array on a second surface of said substrate, bumps of said ball grid array being electrically connected to said conductive traces.
10. The process according to claim 9 , wherein said mounting a heat spreader comprises fixing four sidewalls that extend from said cap, to said substrate.
11. The process according to claim 9 , wherein said mounting said heat spreader comprises fixing said at least one sidewall to at least one of said conductive traces of said substrate.