Method for treating substrates for microelectronics and substrates obtained by said method
View Patent ↗An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.
1. A multilayer wafer, comprising:
a base substrate;
a first layer associated with the base substrate; and
a second layer having a thickness and a lateral edge and being associated with the first layer on a side opposite from the base substrate, and comprising silicon having a SECCO defect density that is less than 500 cm −2 and substantially constant throughout the entire thickness of the second layer.
2. The wafer of claim 1 , in the form of a semiconductor wafer wherein the second layer comprises an oxidizable semiconductor material and the first layer comprises an oxidized insulator material.
3. The wafer of claim 2 , wherein the first layer comprises silicon dioxide and the second comprises silicon.
4. The wafer of claim 3 , wherein the first layer has a thickness of about 4000 Å and the second layer has a thickness of about 2000 Å.
5. The wafer of claim 1 , wherein the first layer comprises silicon dioxide and the second comprises silicon.
6. The wafer of claim 1 , wherein the first layer has a thickness of about 4000 Å and the second layer has a thickness of about 2000 Å.
7. The wafer of claim 1 , wherein the first layer includes a ridge that protrudes away from the base substrate and is disposed adjacent the lateral edge of the second layer for preventing edge falls in the lateral edge.
8. A multilayer wafer, comprising:
a base substrate;
a first layer associated with the base substrate and having a ridge that protrudes away from the base substrate; and
a second surface layer having a thickness and a lateral edge and being associated with the first layer on a side opposite from the base substrate;
wherein the ridge of the first layer surround an acute portion of the lateral edge of the second layer and is configured and dimensioned to extend beyond and protrude above the thickness of the second surface layer to prevent edge falls in the lateral edge of the second layer.
9. The wafer of claim 8 , in the form of a semiconductor wafer wherein the second layer comprises an oxidizable semiconductor material and the first layer comprises an oxidized insulator material.
10. The wafer of claim 9 , wherein the first layer comprises silicon dioxide and the second comprises silicon.
11. The wafer of claim 10 , wherein the first layer has a thickness of about 4000 Å and the second layer has a thickness of about 2000 Å.
12. The wafer of claim 8 , wherein the first layer comprises silicon dioxide and the second comprises silicon.
13. The wafer of claim 12 , wherein the ridge is formed by an embedded layer of silicon dioxide.
14. A multilayer wafer, comprising:
a base substrate;
a first layer associated with the base substrate and having a ridge that protrudes away from the base substrate; and
a second layer having a thickness and a lateral edge and being associated with the first layer on a side opposite from the base substrate;
wherein the second layer has a SECCO defect density that is less than 500 cm −2 and substantially constant throughout the entire thickness of the second layer, and
wherein the ridge of the first layer is disposed adjacent the lateral edge of the second layer and is configured and dimensioned to prevent edge falls in the lateral edge.
15. The wafer of claim 14 , wherein the first layer has a thickness of about 4000 Å and the second layer has a thickness of about 2000 Å.