Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate read and write registers and tag blocks
View Patent ↗A high-speed, static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate data read and write registers and tag blocks. The inclusion of separate data read and write registers allows the device to effectively operate at a cycle time limited only by the DRAM subarray cycle time. Further, the inclusion of two tag blocks allows one to be accessed with an externally supplied address and the other to be accessed with a write-back address, thus eliminating the requirement for a single tag to execute two read-modify write cycles in one DRAM cycle time.
1. An integrated circuit device comprising:
a dynamic random access memory array comprising a plurality of memory subarrays;
a cache for mirroring any one of said plurality of memory subarrays;
a mirrored subarray pointer for indicating which one of said plurality of memory subarrays is currently being mirrored by said cache;
a tag for indicating which data in said cache is valid; and
means for storing a previous external address means for indication of whether there is an incorrect bit set in said tag that must be corrected in a subsequent cycle.
2. The integrated circuit device of claim 1 wherein said means for storing a previous external address comprises a register.
3. The integrated circuit device of claim 1 further comprising:
a data read register for maintaining data that has been read from said memory array; and
a data write register for maintaining data that has been read from said cache.
4. The integrated circuit device of claim 3 wherein said data maintained in said data read register is subsequently to be written into said cache.
5. The integrated circuit device of claim 4 wherein said data maintained in said data read register is written to said cache in a subsequent device clock cycle.
6. The integrated circuit device of claim 3 wherein said data maintained in said data write register is subsequently to be written into said memory array.
7. The integrated circuit device of claim 6 wherein said data maintained in said data write register is written to said memory array in a subsequent device clock cycle.
8. The integrated circuit device of claim 1 wherein said cache comprises dynamic random access memory cells.
9. The integrated circuit device of claim 8 wherein said cache comprises a number of memory cells equal to that of each of said plurality of memory subarrays.
10. The integrated circuit device of claim 8 further comprising:
a refresh counter coupled to said memory array and said cache.
11. The integrated circuit device of claim 10 wherein said refresh counter is coupled to said memory array and said cache through respective internal array and cache address busses.
12. The integrated circuit device of claim 1 further comprising:
an address control block for receiving addresses supplied externally to said integrated circuit device.
13. The integrated circuit device of claim 12 wherein said address control block is coupled to said memory array and said cache through an external address bus.
14. The integrated circuit device of claim 13 further comprising:
an internal array address bus and an internal cache address bus separate from said external address bus.
15. The integrated circuit device of claim 14 further comprising:
a refresh counter coupled to said internal array address bus and said internal cache address bus.
16. The integrated circuit device of claim 14 further comprising:
a write-back counter coupled to said internal array address bus and said internal cache address bus.
17. The integrated circuit device of claim 14 further comprising:
a write tag block and a read tag block for tracking valid data in said cache.
18. The integrated circuit device of claim 17 further comprising:
a write tag address bus coupled to said write tag block; and
a read tag address bus coupled to said read tag block, said write and read tag address busses being coupled to said external address bus.
19. The integrated circuit device of claim 13 wherein said means for storing a previous external address comprises a previous external address register coupled to said external address bus for storing an external address for at least one cycle.