Processing probe

1. A processing probe for repairing a defective portion in a photo-mask, the processing probe comprising: a conductive cantilever; and a conductive probe for scratch-processing a defective portion of a photo-mask, the conductive probe being separate and independent from the conductive cantilever and being integrally connected to an end portion of the conductive cantilever for undergoing deformation due to a physical force generated between the photo-mask and the conductive probe during processing of the defective portion.

2. A processing probe according to claim 1 ; wherein the cantilever comprises an anisotropically-etched silicon cantilever; and further comprising a conductive element injected into the cantilever and the probe for making the cantilever and the probe conductive.

3. A processing probe according to claim 1 ; wherein the cantilever comprises an anisotropically-etched silicon cantilever; and further comprising a metal coating disposed on the cantilever and the probe for making the cantilever and the probe conductive.

4. A processing probe according to claim 1 ; wherein the cantilever comprises an anisotropically-etched silicon cantilever coated with a conductive film for making the cantilever conductive.

5. A processing probe according to claim 1 ; wherein the cantilever is coated with a thin metal film for making the cantilever conductive.

6. A processing probe according to claim 1 ; wherein the cantilever comprises an anisotropically-etched silicon cantilever and the conductive probe is formed on the end of the silicon cantilever by a focused ion beam deposition technique; and further comprising a conductive film coated on the silicon cantilever and the conductive probe.

7. A processing probe according to claim 6 ; wherein the conductive probe is in the shape of a cylinder.

8. A processing probe according to claim 6 ; wherein the conductive probe is in the shape of a square pillar.

9. A processing probe for repairing a defective portion in a sample, the processing probe comprising:

a cantilever; and

a probe separate and independent from the cantilever and integrally connected to an end portion of the cantilever for scratch-processing a defective portion of a sample, the cantilever and the probe being conductive for preventing the generation of electrostatic charges by friction of the probe against the sample during scratch-processing of the defective portion of the sample.

10. A processing probe according to claim 9 ;

wherein the cantilever comprises an anisotropically-etched silicon cantilever.

11. A processing probe according to claim 9 ;

further comprising a conductive element injected into the cantilever and the conductive probe for making the cantilever and the probe conductive.

12. A processing probe according to claim 9 ;

further comprising a metal coating disposed on the cantilever and the probe for making the cantilever and the probe conductive.

13. A processing probe according to claim 9 ;

wherein the cantilever comprises an anisotropically-etched silicon cantilever coated with a conductive film.

14. A processing probe according to claim 9 ;

wherein the cantilever comprises a thin metal film.

15. A processing probe according to claim 9 ;

wherein the cantilever comprises an anisotropically-etched silicon cantilever and the conductive probe is formed on the end of the silicon cantilever by a focused ion beam deposition technique; and further comprising a conductive film coated on the silicon cantilever and the conductive probe.

16. A processing probe according to claim 15 ;

wherein the conductive probe is in the shape of a cylinder.

17. A processing probe according to claim 15 ;

wherein the conductive probe is in the shape of a square pillar.