Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby
View Patent ↗A method of producing a semiconductor device on a silicon on insulator (SOI) substrate is disclosed. In one aspect, the method comprises providing a device with a monocrystalline semiconductor layer on an insulating layer; providing a mask on the semiconductor layer to provide first shielded portions and first unshielded portions, amorphizing the first unshielded portions to yield first amorphized portions of the monocrystalline semiconductor layer, implanting a first dopant in the first amorphized portions, applying a first solid phase epitaxial regrowth action to the semiconductor device while using the first shielded portions as monocrystalline seeds.
1. A method of producing a semiconductor devices comprising:
providing a device with a monocrystalline semiconductor layer on an insulating layer;
providing a mask on the semiconductor layer to form first shielded portions and first unshielded portions;
amorphizing the first unshielded portions to yield first amorphized portions of the monocrystalline semiconductor layer;
implanting a first dopant in the first amorphized portions; and
applying a first solid phase epitaxial regrowth action to the semiconductor device while using the first shielded portions as monocrystalline seeds.
2. The method according to claim 1 , further comprising:
providing a second mask on the semiconductor layer to provide second shielded portions and second unshielded portions, at least some of the second unshielded portions substantially coinciding with the first shielded portions;
amorphizing the at least some of the second unshielded portions to yield second amorphized portions;
implanting a second dopant in the second amorphized portions; and
applying a second solid phase epitaxial regrowth action to the semiconductor device.
3. The method according to claim 2 , wherein the second solid phase epitaxial regrowth action includes annealing at a temperature between about 550° C. and about 750° C. during a period of about 1 second to about 1 minute.
4. The method according to claim 1 , wherein the semiconductor layer has a thickness of between about 10 nm and about 100 nm.
5. The method according to claim 1 , wherein the insulating layer is silicon dioxide (SiO 2 ).
6. The method according to claim 1 , wherein the amorphizing is performed with particles selected from the set of Ge, GeF 2 and Si.
7. The method according to claim 1 , wherein the amorphizing and the implanting are simultaneously performed with As.
8. The method according to claim 1 , wherein the first solid phase epitaxial regrowth action includes annealing at a temperature between about 550° C. and about 750° C. during a period of about 1 second to about 1 minute.
9. A semiconductor device made by a method according to claim 1 .
10. An apparatus comprising a semiconductor device according to claim 9 .