IP Library Assignment 022092/0572
Patent Assignment
Reel/Frame 022092/0572

Assignment of Assignor's Interest

Recorded: 2009-01-13 Pages: 6
Assignor
Assignee
NXP B.V.
HIGH TECH CAMPUS 60, 5656 AG EINDHOVEN, NETHERLANDS
Covered Properties (25)
Method and Apparatus for Forming Expitaxial Layers
Patent: 7,615,390 →
Application: 10/530,063 →
Publication: US 2006/0040477
Method of Epitaxial Deoposition of an N-Doped Silicon Layer
Patent: 7,605,060 →
Application: 10/550,853 →
Publication: US 2006/0205185
Sige Strain Relaxed Buffer for High Mobility Devices and a Method of Fabricating It
Patent: 6,906,400 →
Application: 10/756,840 →
Publication: US 2004/0227158
Method for Reducing the Contact Resistance of the Connection Regions of a Semiconductor Device
Patent: 7,189,648 →
Application: 10/966,141 →
Publication: US 2005/0112875
Method and Apparatus for Forming a Semiconductor Substrate with a Layer Structure of Activated Dopants
Patent: 7,214,592 →
Application: 10/966,145 →
Publication: US 2005/0112831
Method for Forming a Notched Gate Insulator for Advanced Mis Semiconductor Devices and Devices Thus Obtained
Patent: 7,157,356 →
Application: 10/966,152 →
Publication: US 2005/0127436
Method for Processing a Semiconductor Device Comprising a Silicon-Oxy-Nitride Dielectric Layer
Patent: 7,238,625 →
Application: 10/966,153 →
Publication: US 2005/0130377
Method for Fabricating Semiconductor Devices Having Silicided Electrodes
Patent: 7,226,827 →
Application: 10/978,786 →
Publication: US 2005/0145943
Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtainable with Such a Method
Patent: 7,326,620 →
Application: 11/077,973 →
Publication: US 2005/0236663
Method for Creating a Pattern in a Material and Semiconductor Structure Processed Therewith
Patent: 7,361,453 →
Application: 11/081,797 →
Publication: US 2005/0214690
Method of Manufacturing a Semiconductor on a Silicon on Insulator (Soi) Substrate Using Solid Epitaxial Regrowth (Sper) and Semiconductor Device Made Thereby
Patent: 7,122,452 →
Application: 11/081,798 →
Publication: US 2005/0227421
Method of Manufacturing a Semiconductor Device Having Damascene Structures with Air Gaps
Patent: 7,510,959 →
Application: 11/083,344 →
Publication: US 2005/0215047
Method to Make Markers for Double Gate Soi Processing
Patent: 7,488,669 →
Application: 11/083,356 →
Publication: US 2005/0214985
Method of Manufacturing a Semiconductor Device Having Damascene Structures with Air Gaps
Patent: 7,589,425 →
Application: 11/084,081 →
Publication: US 2005/0221600
Method of Fabricating Self-Aligned Source and Drain Contacts in a Double Gate Fet with Controlled Manufacturing of a Thin Si or Non-Si Channel
Patent: 7,795,112 →
Application: 11/093,265 →
Publication: US 2005/0227444
Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided Gates
Application: 11/382,986 →
Publication: US 2006/0263961
Method for Forming a Fully Silicided Gate and Devices Obtained Thereof
Patent: 7,491,635 →
Application: 11/484,439 →
Publication: US 2007/0015334
Semiconductor Device Fabricated by a Method of Reducing the Contact Resistance of the Connection Regions
Patent: 7,320,939 →
Application: 11/526,116 →
Publication: US 2007/0020930
Method for forming a notched gate insulator for advanced MIS semiconductor devices and devices thus obtained
Application: 11/636,817 →
Publication: US 2007/0155118
Imaging Apparatus Provided with Image Scaling Function and Image Data Thinning-Out Readout Function
Patent: 7,948,543 →
Application: 11/745,302 →
Publication: US 2007/0206207
Semiconductor Devices Having Silicided Electrodes
Application: 11/750,916 →
Publication: US 2007/0215951
Method for Forming Doped Metal-Semiconductor Compound Regions
Application: 11/830,735 →
Publication: US 2008/0057685
Method for Junction Formation in a Semiconductor Device and the Semiconductor Device Made Thereof
Patent: 7,582,547 →
Application: 11/833,931 →
Publication: US 2008/0057683
Phase-Change Memory Cell with a Patterned Layer
Patent: 7,897,952 →
Application: 11/914,638 →
Publication: US 2010/0001248
Phase-Change Memory Cell Having Two Insulated Regions
Patent: 8,008,644 →
Application: 11/914,645 →
Publication: US 2008/0265237
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 15, 2004
From: DELHOUGNE, ROMAIN; LOO, ROGER; CAYMAX, MATTY
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
Reel/Frame 014856/0905 →
Assignment of Assignor's Interest Jul 15, 2004
From: MEUNIER-BEILLARD, PHILIPPE
To: KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 014856/0872 →
Assignment of Assignor's Interest Jan 21, 2005
From: SURDEANU, RADU CATALIN
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 015617/0475 →
Assignment of Assignor's Interest Feb 1, 2005
From: LANDER, ROBERT; VAN DAL, MARCUS JOHANNES HENRICUS; HOOKER, JACOB CHRISTOPHER
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 016222/0010 →
Assignment of Assignor's Interest Feb 16, 2005
From: VENEZIA, VINCENT CHARLES; CUBAYNES, FLORENCE NATHALIE
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS N. V.
Reel/Frame 015690/0048 →
Assignment of Assignor's Interest Feb 22, 2005
From: HENSON, KIRKLEN; SURDEANU, RADU CATALIN
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 016298/0286 →
Assignment of Assignor's Interest Mar 21, 2005
From: SCHRAM, TOM; HOOKER, JACOB CHRISTOPHER; VAN DAL, MARCUS JOHANNES HENRICUS
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 016382/0390 →
Assignment of Assignor's Interest Mar 31, 2005
From: MEUNIER-BEILLAR, PHILIPPE; CAYMAX, MATHIEU R.J.
To: KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 017046/0178 →
Assignment of Assignor's Interest Jun 10, 2005
From: PAWLAK, BARTLOMIEJ JAN
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016325/0427 →
Assignment of Assignor's Interest Jun 10, 2005
From: LOO, JOSINE JOHANNA GERARDA PETRA; PONOMAREV, YOURI V.; LAIDLER, DAVID WILLIAM
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016325/0447 →
Assignment of Assignor's Interest Jun 15, 2005
From: DAAMEN, ROEL; HOANG, VIET NGUYEN
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016691/0234 →
Assignment of Assignor's Interest Jun 20, 2005
From: DAAMEN, ROEL; VERHEIJOEN, GREJA JOHANNA ADRIANA MARIA
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016707/0920 →
Assignment of Assignor's Interest Jun 21, 2005
From: VERHEIJDEN, GREJA JOHANNA ADRIANA MARIA; BANCKEN, PASCAL HENRI LEON; VAN WINGERDEN, JOHANNES
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016376/0482 →
Assignment of Assignor's Interest Jun 21, 2005
From: PONOMAREV, YOURI V.; LOO, JOSINE JOHANNA GERARDA PETRA
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016376/0463 →
Assignment of Assignor's Interest Jul 8, 2005
From: PAWLAK, BARTLOMIEJ JAN
To: INTERUNIVERSITAIR MICRO-ELEKTRONICS CENTRUM (IMEC VZW), A BELGIUM CORPORATION; KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 016755/0364 →
Assignment of Assignor's Interest Sep 22, 2005
From: MEUNIER-BEILLARD, PHILIPPE; CAYMAX, MATHIEU R. J.
To: KONINKLIJKE PHILIPS ELECTRONICS N.V.
Reel/Frame 017816/0820 →
Assignment of Assignor's Interest Jul 19, 2006
From: KITTL, JORGE ADRIAN; LAUWERS, ANNE; VELOSO, ANABELA; KOTTANTHARAYIL, ANIL
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC); TEXAS INSTRUMENTS INCORPORATED; KONINKLIJKE PHILLIPS ELECTRONICS
Reel/Frame 017960/0800 →
Assignment of Assignor's Interest Sep 29, 2006
From: KITTL, JORGE ADRIAN; LAUWERS, ANNE; VELOSO, ANABELA; KOTTANTHARYIL, ANIL
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM; TEXAS INSTRUMENTS INCORPORATED; KONINKLIJKE PHILIPS ELECTRONICS
Reel/Frame 018328/0019 →
Change of Name Oct 26, 2009
From: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM
To: IMEC
Reel/Frame 023419/0185 →
Change of Name Dec 4, 2009
From: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
To: IMEC
Reel/Frame 023594/0846 →
"Imec" Is an Alternative Official Name for "Interuniversitair Microelektronica Centrum Vzw" Apr 7, 2010
From: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
To: IMEC
Reel/Frame 024200/0675 →
Assignment of Assignor's Interest May 1, 2015
From: IMEC
To: NXP B.V.
Reel/Frame 035547/0275 →
Assignment of Assignor's Interest Aug 7, 2015
From: NXP B.V.
To: III HOLDINGS 6, LLC
Reel/Frame 036304/0330 →
Release of Security Interest Jan 28, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 037614/0856 →
Security Agreement Supplement Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →