Method of manufacturing a semiconductor device having damascene structures with air gaps

1. A method of manufacturing a semiconductor device having a damascene structure with air gaps, comprising:

depositing and patterning a disposable layer;

depositing a first barrier layer on the patterned disposable layer;

depositing a metal layer on the first barrier layer and between the patterned portions of the disposable layer;

planarizing the metal layer;

depositing a second barrier layer on the planarized metal layer and the patterned portions of the disposable layer;

planarizing the second barrier layer until substantially no barrier layer is present on top of the patterned portions of the disposable layer;

depositing a permeable dielectric layer on the planarized second barrier layer and the patterned portions of the disposable layer; and

removing the patterned portions of the disposable layer through the permeable dielectric layer so as to form air gaps, wherein the removing comprises heating the disposable layer so that the patterned portions decompose and diffuse through the permeable dielectric layer, and wherein a single CVD reactor is used for depositing the permeable dielectric layer and for removing of the patterned portions of the disposable layer by heating in order to decompose the disposable layer.

2. The method according to claim 1 , wherein the first and second barrier layers comprise conductive material.

3. The method according to claim 1 , wherein the disposable layer is a photoresist layer or an organic polymer with a low mass.

4. The method according to claim 1 , further comprising etching the disposable layer, wherein the patterning and etching of the disposable layer is adapted to form additional patterns in the disposable layer to provide metal dummy structures in the disposable layer after the removing of the patterned portions of the disposable layer.

5. The method of claim 2 , wherein the conductive material comprises at least one of the following: tungsten nitride, titanium, titanium nitride, titanium silicide, tantalum and tantalum nitride.

6. A method of manufacturing a semiconductor device having damascene structures with air gaps, the method comprising:

depositing a first barrier layer on a patterned disposable layer, wherein the disposable layer includes a plurality of patterned portions;

forming a planarized metal layer between the plurality of patterned portions of the disposable layer;

forming a second barrier layer on top of the metal layer, without covering the plurality of patterned portions of the disposable layer;

depositing a permeable layer on the metal layer and the plurality of patterned portions of the disposable layer; and

removing the plurality of patterned portions of the disposable layer through the permeable layer, so as to form air gaps therein, wherein the removing comprises heating the disposable layer so that the patterned portions decompose and diffuse through the permeable dielectric layer, and wherein a single CVD reactor is used for depositing the permeable layer and for removing of the plurality of patterned portions of the disposable layer by heating in order to decompose the disposable layer.

7. The method of claim 6 , wherein the first and second barrier layers comprise conductive material.

8. The method of claim 6 , wherein the conductive material comprises at least one of the following: tungsten nitride, titanium, titanium nitride, titanium silicide, tantalum and tantalum nitride.

9. The method of claim 1 , wherein no openings are formed in the permeable dielectric layer so as to remove the patterned portions of the disposable layer.

10. The method of claim 6 , wherein no openings are formed in the permeable dielectric layer to remove the patterned portions of the disposable layer.

11. The method of claim 1 , wherein the disposable layer is heated at a temperature between 300° C.-500° C.

12. The method of claim 6 , wherein the disposable layer is heated at a temperature between 300° C.-500° C.