IP Library Granted Patent US 7,402,943
Granted Patent B2
US 7,402,943 · App. 11/085,046 · Granted Jul 22, 2008

Oxynitride phosphor and a light emitting device

Assignees: Fujikura Ltd.; National Institute for Materials Science
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Quick Facts
Patent No.
US 7,402,943
App. No.
11/085,046
Granted
Jul 22, 2008
Kind
B2
Abstract

A preferred embodiment according to the present invention provides in one preferred mode an oxynitride phosphor especially suitable for a light emitting device such as but not limited to a white light emitting diode lamp and also such a light emitting device. The oxynitride phosphor in the embodiment is represented by a general formula Ca x (Si,Al) 12 (O,N) 16 :Eu 2+ y , wherein a Ca composition of x is in a range of from 0.75 to 1.0 and a Eu composition of y is in a range of from 0.04 to 0.25, and wherein a main phase thereof has substantially an alpha SiAlON crystal structure.

Claims (9)

1. An oxynitride phosphor represented by a general formula Ca x Si 12−(m+n) Al (m+n) O n N 16−n :Eu 2+ y ;

wherein a calcium composition of x is in a range of from 0.75 to 1.0 and a europium composition of y is in a range of from 0.04 to 0.0833,

wherein an oxygen composition of n is greater than 0.81, and

wherein a main phase thereof has substantially an alpha SiAlON crystal structure.

2. A light emitting device comprising:

a semiconductor light source element, and

a wavelength conversion material that converts a wavelength of light emitted from said semiconductor light source element,

wherein the wavelength conversion material is represented by a general formula Ca x Si 12−(m+n) Al (m+n) O n N 16−n :Eu 2+ y , in which a calcium composition of x is in a range of from 0.75to 1.0 and a europium composition of y is in a range of from 0.04 to 0.0833, in which the oxygen composition of n is greater than 0.81 and in which a main phase thereof has substantially an alpha SiAlON crystal structure.

3. A light emitting device according to claim 2 , wherein the semiconductor light source element is a semiconductor light emitting diode that has a primary emission wavelength of from 400 nm to 480 nm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2016
From: FUJIKURA LTD.
To: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Reel/Frame 040808/0511 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2005
From: SAKUMA, KEN; HIROSAKI, NAOTO
To: FUJIKURA LTD.; NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Reel/Frame 016901/0267 →
Priority Claims (1)
JP P2004-083419 · Mar 22, 2004 · national
Continuity (1)
Related Publication 20050285506A1 · Dec 29, 2005