IP Library › Granted Patent US 7,085,059
Granted Patent B2
US 7,085,059 · App. 11/087,230 · Granted Aug 1, 2006

Spatial light modulator with robust mirror substrate condition

Assignee: Silicon Light Machines Corporation
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Quick Facts
Patent No.
US 7,085,059
App. No.
11/087,230
Granted
Aug 1, 2006
Kind
B2
Abstract

A light modulator and a method of manufacturing the same are provided having a substrate with reflectivity enhancing layers formed thereon. The layers include at least a top surface for receiving incident light, a first layer overlying the substrate, and a second layer between the top surface and the first layer, the second layer overlying and abutting the first layer. The second layer has a predetermined thickness selected in relation to an index of refraction of the second layer and to a wavelength of the incident light such that the light reflecting off an interface between the first and second layers constructively interferes with light reflected from the top surface. Preferably, the first layer also has a predetermined thickness selected such that the light reflecting off an interface between the first layer and the substrate constructively interferes with light reflected from the top surface.

Claims (33)

1. A light modulator for modulating light incident thereon, the modulator including a substrate having a plurality of reflectivity enhancing layers formed thereon, said plurality of reflectivity enhancing layers comprising at least:

a top surface for receiving light incident on the light modulator;

a first layer overlying the substrate;

a second layer between the top surface and the first layer, the second layer overlying and abutting the first layer; and

wherein the second layer has a predetermined thickness which depends upon a wavelength of the light in the second layer, and the predetermined thickness of the second layer is such that the light passing through the second layer and reflecting off an interface between the first and second layers constructively interferes with the light reflected from the top surface.

2. A light modulator according to claim 1 , wherein the first layer has a predetermined thickness which depends upon a wavelength of the light the first layer, and the predetermined thickness of the first layer is such that the light passing through the first layer and reflecting off an interface between the first layer and the substrate constructively interferes with the light reflected from the top surface.

3. A light modulator according to claim 2 , wherein the substrate is electrically active, and wherein the first layer comprises a dielectric layer and the second layer comprises a conductive interconnect layer.

4. A light modulator according to claim 3 , wherein the predetermined thickness of the second layer provides electrical conductivity sufficient to controllably operate the light modulator, and the predetermined thickness of the first layer reduces capacitive coupling to electrically isolate the underlying electrically active substrate from the overlying conductive interconnect layer.

5. A light modulator according to claim 4 , wherein each of the first and second layers comprise a predetermined thickness substantially equal to an odd multiple of one-quarter of the wavelength of the light within that layer.

6. A light modulator according to claim 5 , wherein each of the first and second layers comprise a predetermined thickness substantially equal to seven quarters of the wavelength of the light within that layer.

7. A light modulator according to claim 2 , further comprising a third layer between the top surface and the second layer, the third layer overlying and abutting the first layer; and wherein the third layer has a known refractive index and a predetermined thickness, and the predetermined thickness of the third layer is such that the light passing through the third layer and reflecting off an interface between the second and third layers constructively interferes with light reflected from the top surface.

8. A light modulator according to claim 1 , wherein the plurality of reflectivity enhancing layers further comprises an etch stop layer overlying the second layer, and wherein a top surface of the etch stop layer is the top surface of the plurality of reflectivity enhancing layers.

9. A light modulator according to claim 1 , wherein the light modulator is selected from the group consisting of:

ribbon light modulators;

tilt mirrors light modulators; and

diaphragm type light modulators.

10. A light modulator according to claim 9 , wherein the light modulator is a ribbon light modulator having a plurality of ribbons with reflective surfaces thereon disposed above the substrate, and wherein the reflective surfaces of the plurality of ribbons are separated from the top surface of the substrate by a distance substantially equal to an odd multiple of one-quarter wavelength of the light incident on the light modulator.

11. A light modulator for modulating light incident thereon, the modulator including a substrate having a plurality of reflectivity enhancing layers formed thereon, each of the plurality of reflectivity enhancing layers comprising refractive indices and thicknesses such that the light passing through at least one of the plurality of reflectivity enhancing layers and reflecting off an interface between a first layer and a second layer underlying and abutting the first layer, or off an interface between the first layer and the substrate, constructively interferes with light reflected from a top surface of the plurality of reflectivity enhancing layers.

12. A light modulator according to claim 11 wherein the substrate is electrically active, and wherein the second layer comprises a dielectric layer and the first layer comprises a conductive interconnect layer.

13. A light modulator according to claim 12 , wherein the predetermined thickness of the first layer provides sufficiently low electrical resistance for the conductive interconnect layer, and the predetermined thickness of the second layer reduces capacitive coupling between the underlying substrate and the overlying conductive interconnect layer so as to electrically isolate the underlying substrate from the overlying conductive interconnect layer.

14. A light modulator according to claim 13 , wherein the first layer comprises a predetermined thickness substantially equal to an odd multiple of one-quarter of a wavelength of the light within the first layer.

15. A light modulator according to claim 14 , wherein the first layer comprises a predetermined thickness substantially equal to seven quarters the wavelength of the light within the first layer.

16. A method of manufacturing a light modulator having a substrate with a plurality of reflectivity enhancing layers formed thereon, the method comprising steps of:

forming a first layer overlying the substrate; and

forming a second layer overlying and abutting the first layer, the second layer having a predetermined thickness in relation to an index of refraction of the second layer and to a wavelength of light incident on a top surface of the plurality of reflectivity enhancing layers such that light passing through the second layer and reflecting off an interface between the first and second layers constructively interferes with light reflected from the top surface.

17. A method according to claim 16 , wherein the step of forming a first layer comprises forming the first layer overlying and abutting the substrate, the first layer having a predetermined thickness in relation to an index of refraction of the first layer and to the wavelength of the incident light such that the light passing through the first layer and reflecting off an interface between the first layer and the substrate constructively interferes with light reflected from the top surface.

18. A method according to claim 17 , wherein the substrate is electrically active, and wherein

the first layer comprises a dielectric layer, and

the second layer comprises a conductive interconnect layer.

19. A method according to claim 18 , wherein:

the dielectric layer formed has a predetermined thickness sufficient to reduce capacitive coupling between underlying substrate and the overlying conductive interconnect layer to electrically isolate, and

the conductive interconnect layer formed has a predetermined thickness sufficient to provide a low electrical resistance for the conductive interconnect layer.

20. A method according to claim 17 , wherein the predetermined thicknesses of the first and second layers are each substantially equal to an odd multiple of one-quarter of a wavelength of the light in that layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2005
From: PAYNE, ALEXANDER P.
To: SILICON LIGHT MACHINES CORP.
Reel/Frame 016947/0447 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2005
From: HUNTER, JAMES A.; AMM, DAVID T.
To: SILICON LIGHT MACHINES CORPORATION
Reel/Frame 016414/0964 →
Continuity (2)
Provisional Application 6055591200 · Mar 24, 2004
Related Publication 20050212004A1 · Sep 29, 2005