Memory device with improved data retention
View Patent ↗The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone.
1. A memory device comprising:
first and second electrodes;
a passive layer between the first and second electrodes; and
an active layer between the first and second electrodes;
the active layer comprising a first active layer material and a second active layer material in the first active layer material, the first active layer material having a first diffusion coefficient, the combined first and second active layer materials having a second diffusion coefficient different from the first diffusion coefficient.
2. The memory device of claim 1 wherein the second diffusion coefficient is lower than the first diffusion coefficient.
3. The memory device of claim 2 wherein the second active layer material comprises an impurity in the first active layer material.
4. The memory device of claim 1 wherein the second active layer material comprises metal atoms.
5. The memory device of claim 4 wherein the first active layer material comprises copper.
6. The memory device of claim 5 wherein the first active layer material comprises Cu 2 O.
7. The memory device of claim 4 wherein the second active layer material comprises aluminum.
8. The memory device of claim 4 wherein the second active layer material comprises indium.
9. A memory device comprising:
first and second electrodes;
a passive layer between the first and second electrodes;
an active layer between the first and second electrodes and into which a charged specie from the passive layer is provided, and from which said charged specie is provided into the passive layer;
the active layer comprising a first active layer material and a second active layer material in the first active layer material, the first active layer material having a first diffusion coefficient, the combined first and second active layer materials having a second diffusion coefficient different from the first diffusion coefficient.
10. The memory device of claim 9 wherein the second diffusion coefficient is lower than the first diffusion coefficient.
11. The memory device of claim 10 wherein the charged specie is copper ions.
12. The memory device of claim 11 wherein the first active layer material comprises copper.
13. The memory device of claim 12 wherein the first active layer material comprises Cu 2 O.
14. The memory device of claim 9 wherein the second active layer material comprises metal atoms.
15. The memory device of claim 14 wherein the second active layer material comprises aluminum.
16. The memory device of claim 14 wherein the second active layer material comprises indium.