Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a semiconductor substrate. An ozone TEOS film is provided on these capacitors, and a protective film for covering the upper surfaces of the capacitors is then provided on this ozone TEOS film. An interlay insulation film that is thicker than the ozone TEOS film is provided on the protective film for covering the upper surfaces of the capacitors. In this way, the present invention prevents degradation in film quality of the capacitive insulation film due to mutual reaction etc. As a result, it becomes possible to provide a capacitor using an insulating film made of a metal oxide as a capacitive insulation film, having a protective film for sufficiently preventing diffusion of H 2 , a semiconductor device having high reliability, and a method of manufacturing such a semiconductor device, are provided.
1. A manufacturing method for a semiconductor device, comprising:
forming a first conductive film over a substrate;
forming a metal oxide film on the first conductive film;
forming a second conductive film on the metal oxide film;
patterning the second conductive film to form an upper electrode of a capacitor element;
forming an ozone TEOS film on the patterned second conductive film and on the metal oxide film;
carrying out heat treatment on the ozone TEOS film, after said forming an ozone TEOS oxide film;
forming a protective film on the ozone TEOS film, after said carrying out heat treatment;
patterning the protective film, the ozone TEOS film, the metal oxide film and the first conductive film to form a capacitor insulating film and a lower electrode of the capacitor element; and
forming an insulation film that is thicker than the ozone TEOS film, to cover the patterned films.
2. The manufacturing method for a semiconductor device of claim 1 , wherein the ozone TEOS film is formed by a chemical vapor deposition using a gas containing ozone and an organic silicon compound.
3. The manufacturing method for a semiconductor device of claim 2 , wherein the protective film is a film having a hydrogen diffusion prevention effect.
4. The manufacturing method for a semiconductor device of claim 2 , wherein the heat treatment is carried out at a temperature of at least 300° C.
5. The manufacturing method for a semiconductor device of claim 1 , wherein the protective film is a film having a hydrogen diffusion prevention effect.
6. The manufacturing method for a semiconductor device of claim 5 , wherein the heat treatment is carried out at a temperature of at least 300° C.
7. The manufacturing method for a semiconductor device of claim 1 , wherein the heat treatment is carried out at a temperature of at least 300° C.
8. The manufacturing method for a semiconductor device of claim 1 , further comprising:
forming a silicon oxide film, after said forming a protective film; and
forming a mask from the silicon oxide film during said patterning the protective film, the ozone TEOS film, the metal oxide film and the first conductive film.
9. The method of manufacturing for a semiconductor device of claim 8 , wherein said forming a silicon oxide film is a chemical vapor deposition using a gas containing ozone.
10. A manufacturing method for a semiconductor comprising:
forming a first conductive film over a substrate;
forming a metal oxide film on the first conductive film;
forming a second conductive film on the metal oxide film;
patterning the second conductive film to form an upper electrode of a capacitor element and to expose an upper surface of the metal oxide film;
forming a protective film on the patterned second conductive film and on the exposed upper surface of the metal oxide film, the protective film having at least an element composed of crystallized core of the metal oxide film;
patterning the protective film, the metal oxide film and the first conductive film to form a capacitor insulating film and a lower electrode of the capacitor element; and forming an insulation film to cover the patterned films,
wherein the protective film has a compositional ratio of crystallized core that is lower than a compositional ratio of crystallized core contained within the metal oxide film.
11. A manufacturing method for a semiconductor device comprising:
forming a first conductive film over a substrate;
forming a metal oxide film on the first conductive film;
forming a second conductive film on the metal oxide film;
patterning the second conductive film to form an upper electrode of a capacitor element and to expose an upper surface of the metal oxide film;
forming a protective film on the patterned second conductive film and on the exposed upper surface of the metal oxide film, the protective film having at least an element composed of crystallized core of the metal oxide film;
patterning the protective film, the metal oxide film and the first conductive film to form a capacitor insulating film and a lower electrode of the capacitor element;
forming an insulation film to cover the patterned films;
forming a silicon oxide film after said forming a protective film; and
forming a mask made of the silicon oxide film for said patterning the protective film, the metal oxide film and the first conductive films,
wherein said forming a silicon oxide film is a chemical vapor deposition using a gas containing ozone.