External optical modulator
An optical modulator structure includes a block that includes electro-optical (EO) materials. A waveguide and electrode structure is formed on a substrate. The block is in close proximity to the waveguide and electrode structure so as to form optical modulation when electric fields in the block are varied.
1. An optical modulator structure comprising:
a block that includes electro-optical (EG) materials; and
a waveguide and electrode structure that is formed on a substrate; said block is in close proximity to said waveguide and electrode structure so as to form optical modulation when electric fields in said block are varied, said electrode structure comprising a plurality of metal RF lines providing the electric fields to drive said block.
2. The optical modulator structure of claim 1 , wherein said EO materials comprise LiNbO 3 (LN).
3. The optical modulator structure of claim 1 , wherein said EO materials comprise BaTiO 3 (BT), SBN, or Lithium Tantalate.
4. The optical modulator structure of claim 1 , wherein said EO materials comprise polymer organic materials.
5. The optical modulator structure of claim 1 further comprising a Si device layer.
6. The optical modulator structure of claim 1 , wherein said block is formed on a silicon die that comprises electronic circuits for driving said optical modulator.
7. The optical modulator structure of claim 1 , wherein said waveguide and electrode structure comprises poly-silicon.
8. The optical modulator structure of claim 1 , wherein said waveguide and electrode structure comprises a SiON or silicon nitride waveguide.
9. The optical modulator structure of claim 1 , wherein said waveguide and electrode structure comprises a high index waveguide.
10. The optical modulator structure of claim 1 , wherein said optical modulation is induced by variation in the electric fields in the EO materials by varying the potential of the local electric field.
11. The optical modulator structure of claim 1 , wherein said optical modulation comprises change in either amplitude, phase, or polarization state.
12. The optical modulator structure of claim 1 , wherein said waveguide and electrode structure comprises passive waveguides for forming various optical elements.
13. A method of performing optical modulation comprising:
providing a block that includes external electro-optical (EO) materials;
forming a waveguide and electrode structure on a substrate, said electrode structure comprising a plurality of metal RF lines providing the electric fields to drive said block; and
producing optical modulation by placing said block is in close proximity to said waveguide and electrode structure.
14. The method of claim 13 , wherein said EO materials comprise LiNbO 3 (LN).
15. The method of claim 13 , wherein said EO materials comprise BaTiO 3 (BT), SBN, or Lithium Tantalate.
16. The method of claim 13 , wherein said EO materials comprise polymer organic materials.
17. The method of claim 13 further comprising a Si device layer.
18. The method of claim 13 , wherein said block is formed on a silicon die that comprises electronic circuits for driving said optical modulator.
19. The method of claim 13 , wherein said waveguide and electrode structure comprises poly-silicon.
20. The method of claim 13 , wherein said waveguide and electrode structure comprises a SiON or silicon nitride waveguide.
21. The method of claim 13 , wherein said waveguide and electrode structure comprises a high index waveguide.
22. The method of claim 13 , wherein said optical modulation is induced by variation in the electric fields in the EO materials by varying the potential of the local electric field.
23. The method of claim 13 , wherein said optical modulation comprises change in either amplitude, phase, or polarization state.
24. The method of claim 13 , wherein said waveguide and electrode structure comprises passive waveguides for forming various optical elements.
25. A method of performing optical modulation comprising:
providing a block that includes external electro-optical (EG) materials; and
forming a waveguide and electrode structure on a substrate, said electrode structure comprising a plurality of metal RE lines providing electric fields to drive said block; and
placing said block is in close proximity to said waveguide and electrode structure; and
varying the electric fields in said block using said RE metal lines.
26. The method of claim 25 , wherein said EO materials comprise LiNbO 3 (LN).
27. The method of claim 25 , wherein said EO materials comprise BaTiO 3 (BT), SBN, or Lithium Tantalate.
28. The method of claim 25 , wherein said EO materials comprise polymer organic materials.
29. The method of claim 25 further comprising providing a Si device layer.
30. The method of claim 25 , wherein said block is formed on a silicon die that comprises electronic circuits for driving said optical modulator.
31. The method of claim 25 , wherein said waveguide and electrode structure comprises poly-silicon.
32. The method of claim 25 , wherein said waveguide and electrode structure comprises a SiON or silicon nitride waveguide.
33. The method of claim 25 , wherein said waveguide and electrode structure comprises a high index waveguide.
34. The method of claim 25 , wherein said optical modulation is induced by variation in the electric fields in the EO materials by varying the potential of the local electric field.
35. The method of claim 25 , wherein said optical modulation comprises change in either amplitude, phase, or polarization state.
36. The method of claim 25 , wherein said waveguide and electrode structure comprises passive waveguides for forming various optical elements.