CMOS imager with enhanced transfer of charge and low voltage operation and method of formation
View Patent ↗A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.
1. A method of forming a pixel sensor cell, said method comprising:
forming a charge collection region and a floating diffusion region in a substrate;
forming a gate of a transfer transistor, over said substrate, for transferring charge from said charge collection region to said floating diffusion region;
forming a non-uniformly doped region having a lateral dopant gradient of a first conductivity type in said substrate and below said gate, said dopant gradient decreasing in conductivity from said charge collection region to said floating diffusion region;
forming a first doped layer of said first conductivity type in said substrate, said first doped layer being displaced laterally from an electrically active portion of said gate by a predetermined distance; and
wherein said charge collection region is of a second conductivity type and is formed in said substrate below said first doped layer.
2. The method of claim 1 , wherein said non-uniformly doped region of said first conductivity type is formed to a width of about 500 Angstroms to about 10,000 Angstroms.
3. The method of claim 1 , wherein said non-uniformly doped region of said first conductivity type is formed to a width of about 5,000 Angstroms.
4. The method of claim 1 , wherein said act of forming said non-uniformly doped region further comprises forming a first implanted region of a first dopant concentration adjacent a second implanted region of a second dopant concentration.
5. The method of claim 4 , wherein said first implanted region is formed by implanting ions of said first conductivity type in a first area of said substrate located below said gate.
6. The method of claim 4 , wherein said first dopant concentration is within the range of from about 1×10 16 to about 1×10 19 atoms per cm 3 .
7. The method of claim 6 , wherein said first dopant concentration is of about 1×10 17 to about 1×10 18 atoms per cm 3 .
8. The method of claim 4 , wherein said second dopant concentration is of about 2×10 16 to about 2×10 19 atoms per cm 3 .
9. The method of claim 8 , wherein said second dopant concentration is of about 2×10 17 to about 2×10 18 atoms per cm 3 .
10. The method of claim 4 , wherein said second dopant concentration is higher than said first dopant concentration and said second implanted region is adjacent said charge collection region.
11. The method of claim 1 , wherein said act of forming said charge collection region of said second conductivity type further comprises implanting an n-type dopant below said first doped layer at a dopant concentration of about 5×10 14 to about 1×10 18 atoms per cm 3 .
12. The method of claim 1 , wherein said first doped layer is a pinned layer.
13. The method of claim 1 , wherein said first doped layer is doped with a p-type dopant at a dopant concentration of from about 1×10 17 to about 1×10 20 atoms per cm 3 .
14. The method of claim 1 , wherein said first doped layer of said first conductivity type and said charge collection region of said second conductivity type form part of a p-n-p photodiode.
15. The method of claim 1 , wherein said first doped layer is in contact with an isolation region formed within said substrate.
16. The method of claim 1 , wherein said first conductivity type is p-type and said second conductivity type is n-type.
17. A method of forming a pixel sensor cell, said method comprising:
forming a charge collection region and a floating diffusion region in a substrate;
forming a gate of a transfer transistor, over said substrate, for transferring charge from a charge collection region to a floating diffusion region;
forming a lateral dopant gradient region of a first conductivity type in said substrate and below said gate, said dopant gradient region including a first area having a first concentration of ions of said first conductivity type and a second area having a second concentration of ions of said first conductivity type that is higher than said first concentration, said dopant gradient region decreasing in conductivity from said charge collection region to said floating diffusion region;
forming a first doped layer of said first conductivity type in said substrate, said first doped layer being displaced laterally from an electrically active portion of said gate by a predetermined distance;
wherein said charge collection region is of a second conductivity type and is formed in said substrate below said first doped layer; and
wherein said floating diffusion region is of said second conductivity type and is formed adjacent said first area of said dopant gradient region.
18. The method of claim 17 , wherein said dopant gradient region of said first conductivity type is formed to a width of about 500 Angstroms to about 10,000 Angstroms.
19. The method of claim 17 , wherein said dopant gradient region of said first conductivity type is formed to a width of about 5,000 Angstroms.
20. The method of claim 17 , wherein said act of forming said charge collection region of said second conductivity type is performed after said formation of said dopant gradient region.
21. The method of claim 20 , wherein said charge collection region of said second conductivity type is formed adjacent but laterally displaced from said second area of said dopant gradient region.
22. The method of claim 17 , wherein said first dopant concentration is within the range of from about 1×10 16 to about 1×10 19 atoms per cm 3 .
23. The method of claim 22 , wherein said first dopant concentration is of about 1×10 17 to about 1×10 18 atoms per cm 3 .
24. The method of claim 17 , wherein said second dopant concentration is of about 2×10 16 to about 2×10 19 atoms per cm 3 .
25. The method of claim 24 , wherein said second dopant concentration is of about 2×10 17 to about 2×10 18 atoms per cm 3 .
26. The method of claim 17 , wherein said second dopant concentration is higher than said first dopant concentration and said second implanted region is adjacent said charge collection region.
27. The method of claim 17 , wherein said act of forming said charge collection region of said second conductivity type further comprises implanting an n-type dopant below said first doped layer to form a charge collection region at a dopant concentration of about 5×10 14 to about 1×10 18 atoms per cm 3 .
28. The method of claim 17 , wherein said first doped layer is a pinned layer.
29. The method of claim 17 , wherein said first doped layer is doped with a p-type dopant at a dopant concentration of from about 1×10 17 to about 1×10 20 atoms per cm 3 .
30. The method of claim 17 , wherein said first doped layer of said first conductivity type and said charge collection region of said second conductivity type form part of a p-n-p photodiode.
31. The method of claim 17 , wherein said first doped layer is in contact with an isolation region formed within said substrate.
32. The method of claim 17 , wherein said first conductivity type is p-type and said second conductivity type is n-type.
33. A method of forming an image sensor, said method comprising:
forming a photosensor having a charge collection region in a silicon substrate;
forming a floating diffusion region in said silicon substrate;
forming a first insulating layer over said silicon substrate;
forming a conductive layer over said insulating layer;
forming a second insulating layer over said conductive layer;
patterning said first insulating layer, said conductive layer, and said second insulating layer to form a gate stack of a charge transfer transistor for transferring charge from said charge collection region to said floating diffusion region; and
forming a lateral channel region of a first conductivity type within a first area of said substrate and below a surface of said silicon substrate, said channel region formed below said gate stack of said charge transfer transistor and having a potential gradient that favors electron movement from said charge collection region to said floating diffusion region;
wherein said photosensor is formed in said substrate by the acts of:
forming a first doped layer of said first conductivity type in said silicon substrate, said first doped layer being laterally displaced from said dopant gradient region; and
forming said charge collection region of a second conductivity type in said silicon substrate and below said first doped layer.
34. The method of claim 33 , wherein said potential gradient is formed as a dopant gradient arranged within said channel region.
35. The method of claim 34 , wherein said dopant gradient region is formed to a width of about 500 Angstroms to about 10,000 Angstroms.
36. The method of claim 35 , wherein said dopant gradient region is formed to a width of about 5,000 Angstroms.
37. The method of claim 34 , wherein said act of forming said dopant gradient region further comprises forming a first implanted region of a first dopant concentration and an adjacent second implanted region of a second dopant concentration.
38. The method of claim 37 , wherein said second dopant concentration is higher than said first dopant concentration and said second implanted region is adjacent said charge collection region.
39. The method of claim 34 , wherein said first implanted region is formed by implanting ions of said first conductivity type in said first area of said substrate.
40. The method of claim 34 , wherein said first dopant concentration is of about 1×10 16 to about 1×10 19 atoms per cm 3 .
41. The method of claim 40 , wherein said first dopant concentration is of about 1×10 17 to about 1×10 18 atoms per cm 3 .
42. The method of claim 34 , wherein said second dopant concentration is of about 2×10 16 to about 2×10 19 atoms per cm 3 .
43. The method of claim 42 , wherein said second dopant concentration is of about 2×10 17 to about 2×10 18 atoms per cm 3 .
44. The method of claim 34 , wherein said act of forming said charge collection region of said second conductivity type further comprises implanting an n-type dopant below said first doped layer to form said charge collection region at a dopant concentration of about 5×10 14 to about 1×10 13 atoms per cm 3 .
45. The method of claim 33 , wherein said first doped layer is a pinned layer.
46. The method of claim 33 , wherein said first doped layer is doped with a p-type dopant at a dopant concentration of about 1×10 17 to about 1×10 20 atoms per cm 3 .
47. The method of claim 33 , wherein said photosensor is a p-n-p photodiode.
48. The method of claim 33 , wherein said first doped layer is in contact with an isolation region formed within said substrate.
49. The method of claim 33 , wherein said first conductivity type is p-type and said second conductivity type is n-type.
50. A method of forming an image sensor, the method comprising:
forming a removable layer over a surface of a substrate;
patterning said removable layer to form a first opening having sidewalls spaced apart by a first width;
implanting ions having a first concentration into said substrate through said first opening in said removable layer to form a first implant region of a first conductivity type;
forming a second opening in a removable layer of said surface of said substrate, said second opening having sidewalls spaced apart by a second width less than said first width;
implanting ions having a second concentration through said second opening into said substrate to form a second implant region, said first and second implant regions decreasing in conductivity from a charge collection area to a floating diffusion region;
forming a gatestack of a charge transfer transistor above said first and second implant regions, said charge transfer transistor for transferring charge from said charge collection area to said floating diffusion region; and
forming a photosensor having said charge collection area in said substrate, said charge collection area being located adjacent at least one of said first and second implant regions.
51. The method of claim 50 , wherein the width of the second opening is approximately half the width of the first opening.
52. The method of claim 50 , wherein the width of the second opening is half the width of the first opening.
53. The method of claim 50 , wherein the act of implanting ions having a second concentration comprises implanting ions of said first conductivity type.
54. A method of forming an image sensor, the method comprising:
forming a removable layer over a surface of a substrate; patterning said removable layer to form a first opening having sidewalls spaced apart by a first width;
implanting ions having a first concentration into said substrate through said first opening in said removable layer to form a first implant region of a first conductivity type;
forming a second opening in a removable layer of said surface of said substrate, said second opening having sidewalls spaced apart by a second width less than said first width;
implanting ions having a second concentration through said second opening into said substrate to form a second implant region;
forming a gatestack above said first and second implant regions; and
forming a photosensor having a charge collection area in said substrate, said charge collection area being located adjacent at least one of said first and second implant regions,
wherein the act of implanting ions having a second concentration comprises implanting ions of a second conductivity type.
55. A method of forming an image sensor, the method comprising:
forming a removable layer over a surface of a substrate;
patterning said removable layer to form a first opening having sidewalls spaced apart by a first width;
implanting ions having a first concentration into said substrate through said first opening in said removable layer to form a first implant region of a first conductivity type;
forming a second opening in a removable layer of said surface of said substrate, said second opening having sidewalls spaced apart by a second width less than said first width;
implanting ions having a second concentration through said second opening into said substrate to form a second implant region;
forming a gatestack above said first and second implant regions; and
forming a photosensor having a charge collection area in said substrate, said charge collection area being located adjacent at least one of said first and second implant regions,
wherein the second implant region is formed at least partially within said first implant region.
56. The method of claim 55 , wherein the second implant region is formed entirely within said first implant region.