Active organic semiconductor devices and methods for making the same
Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.
1. A process for disposing an organic semiconductor film on a receiver substrate, comprising the steps of:
depositing an organic semiconductor film onto a donor substrate, said semiconductor film having a first surface facing said donor substrate and having an exposed second surface;
bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and
then, moving the donor and receiver substrates apart; and
wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step.
2. The process of claim 1 , wherein a surface portion of the donating substrate is maintained below its glass transition during the moving step.
3. The process of claim 1 , in which said second glass transition occurs at a temperature at least about 20° Kelvin below said first glass transition.
4. The process of claim 1 , in which said second glass transition occurs at a temperature within a range of between about 280° Kelvin and about 300° Kelvin.
5. The process of claim 1 , in which said first glass transition temperature occurs at a temperature within a range of between about 370° Kelvin and about 385° Kelvin.
6. The process of claim 1 , in which said donor substrate has a surface energy within a range of between about 10 dynes/square centimeter and about 30 dynes/square centimeter.
7. The process of claim 1 , in which said donor substrate has a surface energy within a range of between about 10 dynes/square centimeter and about 20 dynes/square centimeter.
8. The process of claim 1 in which said semiconductor is deposited as a vapor onto said donor substrate.
9. The process of claim 1 in which said semiconductor film is discontinuous.
10. The process of claim 1 in which said heat is provided at a temperature within a range of between about 50° C. and about 150° C.
11. The process of claim 1 in which said donor substrate comprises a member selected from the group consisting of poly(trifluoroethylmethacrylate), poly(cyclohexylmethacrylate), and poly(4-methylstyrene).
12. The process of claim 1 in which said receiver substrate comprises poly(butylmethacrylate).
13. The process of claim 1 in which said heat is applied through said donor substrate.
14. An active organic semiconductor device made by the process of claim 1 .