Method of manufacturing radiating plate and semiconductor apparatus using the same
A method of manufacturing a radiating plate using In as a thermal conducting bonding material 20 provided between a semiconductor device and a radiating plate 14 and serving to bond a back surface of the semiconductor device to the radiating plate, includes the steps of carrying out a cleaning treatment for cleaning a surface of the radiating plate 14 , supplying the In to the radiating plate 14 , heating and melting the In and hermetically adhering the In 18 to the radiating plate, thereby obtaining an In integral type radiating plate.
1. A method of manufacturing a radiating plate using In or In-alloy as a thermal conducting bonding material provided between a semiconductor device and a radiating plate and serving to bond a back surface of the semiconductor device to the radiating plate, comprising the steps of:
forming the radiating plate to take a predetermined shape;
carrying out plating over a surface of the radiating plate;
performing a cleaning treatment for cleaning the surface of the radiating plate; and
pressing an In or In-alloy foil onto a predetermined position of the cleaned surface of the radiating plate, thereby obtaining an In integral type radiating plate, wherein the cleaning treatment facilitates hermetically adhering the In or In-alloy foil to the cleaned surface of the radiating plate and without melting the In or In-alloy foil.
2. The method of manufacturing a radiating plate according to claim 1 , wherein an electrolytic treatment for setting the radiating plate to be a cathode in an electrolyte is carried out as the cleaning treatment.