Semiconductor device including a superlattice with regions defining a semiconductor junction

1. A semiconductor device comprising:

a superlattice comprising a plurality of stacked groups of layers;

each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;

said energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions; and

said superlattice comprising at least one pair of oppositely-doped regions therein defining at least one semiconductor junction.

2. The semiconductor device of claim 1 wherein said at least one pair of oppositely-doped regions comprises first and second regions in direct contact with one another.

3. The semiconductor device of claim 1 wherein said at least one pair of oppositely-doped regions comprises first and second regions spaced from one another.

4. The semiconductor device of claim 1 wherein said at least one pair of oppositely-doped regions are arranged in a vertical direction so that said at least one semiconductor junction extends in a lateral direction.

5. The semiconductor device of claim 1 wherein said at least one pair of oppositely-doped regions are arranged in a lateral direction so that said at least one semiconductor junction extends in a vertical direction.

6. The semiconductor device of claim 1 wherein each energy band-modifying layer comprises oxygen.

7. The semiconductor device of claim 1 wherein each energy band-modifying layer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.

8. The semiconductor device of claim 1 wherein each energy band-modifying layer is a single monolayer thick.

9. The semiconductor device of claim 1 wherein each base silicon portion is less than eight monolayers thick.

10. The semiconductor device of claim 1 wherein said superlattice further comprises a base semiconductor cap layer on an uppermost group of layers.

11. The semiconductor device of claim 1 wherein all of said base silicon portions are a same number of monolayers thick.

12. The semiconductor device of claim 1 wherein at least some of said base silicon portions are a different number of monolayers thick.

13. A semiconductor device comprising:

a superlattice comprising a plurality of stacked groups of layers;

each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;

said energy band-modifying layer comprising at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; and

said superlattice comprising at least one pair of oppositely-doped regions therein in direct contact with one another and defining at least one semiconductor junction.

14. The semiconductor device of claim 13 wherein said at least one pair of oppositely-doped regions are arranged in a vertical direction so that said at least one semiconductor junction extends in a lateral direction.

15. The semiconductor device of claim 13 wherein said at least one pair of oppositely-doped regions are arranged in a lateral direction so that said at least one semiconductor junction extends in a vertical direction.

16. The semiconductor device of claim 13 wherein each energy band-modifying layer is a single monolayer thick.

17. The semiconductor device of claim 13 wherein each base silicon portion is less than eight monolayers thick.

18. The semiconductor device of claim 13 wherein said superlattice further comprises a base semiconductor cap layer on an uppermost group of layers.

19. The semiconductor device of claim 13 wherein all of said base silicon portions are a same number of monolayers thick.

20. The semiconductor device of claim 13 wherein at least some of said base silicon portions are a different number of monolayers thick.