IP Library Granted Patent US 7,344,913
Granted Patent B1
US 7,344,913 · App. 11/099,847 · Granted Mar 18, 2008

Spin on memory cell active layer doped with metal ions

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Quick Facts
Patent No.
US 7,344,913
App. No.
11/099,847
Granted
Mar 18, 2008
Kind
B1
Abstract

A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techniques and contains an organic semiconductor doped with a metal salt.

Claims (32)

1. A method of making an organic memory cell comprising:

providing a first electrode;

forming a passive layer comprising a conductivity facilitating compound over the first electrode;

forming an active layer over the passive layer using a spin-on technique, the spin-on technique comprising applying a mixture of i) from about 0.1% to about 75% by weight of an organic semiconductor material, ii) from about 0.1% to about 20% by weight of an inorganic metal salt, and iii) from about 25% to about 99.9% by weight of at least one solvent selected from the group consisting of glycol ether esters, glycol ethers, furans, and alkyl alcohols containing from about 4 to about 7 carbon atoms;

contacting the active layer with hydrogen sulfide gas to permit hydrogen sulfide to react with the inorganic metal salt to form a metal sulfide; and

providing a second electrode over the active layer.

2. The method of claim 1 , wherein the inorganic metal salt comprises at least one selected from the group consisting of copper salts, manganese salts, titanium salts, indium salts, gold salts, silver salts, iron salts, cobalt salts, nickel salts, palladium salts, platinum salts, zirconium salts, zinc salts, tungsten salts, molybdenum salts, and osmium salts.

3. The method of claim 1 , wherein the inorganic metal salt comprises at least one selected from the group consisting of copper halogens, copper sulfate, copper persulfate, copper nitrate, and copper phosphate.

4. The method of claim 1 , wherein the solvent comprises at least one glycol ether selected from the group consisting of poly(ethylene glycol) methyl ether, poly(ethylene glycol) ethyl ether, poly(ethylene glycol) propyl ether, poly(ethylene glycol) butyl ether, poly(propylene glycol) methyl ether, poly(propylene glycol) ethyl ether, poly(propylene glycol) propyl ether, poly(propylene glycol) butyl ether, ethylene glycol methyl ether, ethylene glycol methylbutyl ether, ethylene glycol ethylbutyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, and propylene glycol dibutyl ether.

5. The method of claim 1 , wherein the solvent comprises at least one glycol ether ester selected from the group consisting of ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol propyl ether acetate, ethylene glycol butyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol butyl ether acetate, poly(ethylene glycol) methyl ether acetate, poly(ethylene glycol) ethyl ether acetate, poly(ethylene glycol) propyl ether acetate, poly(ethylene glycol) butyl ether acetate, poly(propylene glycol) methyl ether acetate, poly(propylene glycol) ethyl ether acetate, poly(propylene glycol) propyl ether acetate, and poly(propylene glycol) butyl ether acetate.

6. The method of claim 1 , wherein the solvent comprises at least one selected from the group consisting of tetrahydrofuran, n-butanol, iso-butanol, n-pentanol, iso-pentanol, cyclopentanol, n-hexanol, cyclohexanol, and heptanol.

7. The method of claim 1 , wherein the active layer comprises at least one conjugated organic polymer selected from the group consisting of poly(p-phenylene vinylene); polyporphyrins; porphyrinic macrocycles, thiol-derivatized polyporphyrins; polymetallocenes such as polyferrocenes, polyphthalocyanines; polyvinylenes; polystiroles; polyacetylene; polydiphenylacetylene; poly(t-butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl)diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polyphenylacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-butyl)phenylacetylene; polynitro-phenylacetylene; poly(trifluoromethyl)phenylacetylene; poly(trimethylsilyl)pheylacetylene; polydipyrrylmethane; polyindoqiunone; polydihydroxyindole; polytrihydroxyindole; furane-polydihydroxyindole; polyindoqiunone-2-carboxyl; polyindoqiunone; polybenzobisthiazole; poly(p-phenylene sulfide); polyaniline; polyfluorene; polyphenylene and alkyl- or alkoxy-substituted derivates thereof; polythiophene and alkyl- or alkoxy-substituted derivates thereof; polypyrrole; polysilane; polystyrene; polyfuran; polyindole; polyazulene; polyphenylene; polyfluorenes, polypyridine; polybipyridine; polyphthalocyanine; polysexithiophene; poly(siliconoxohemiporphyrazine); poly(germaniumoxohemiporphyrazine); and poly(ethylenedioxythiophene).

8. The method of claim 1 , wherein the conductivity facilitating compound comprises at least one selected from the group consisting of copper sulfide, copper oxide, manganese oxide, titanium dioxide, indium oxide, silver sulfide, gold sulfide, nickel arsenide, cobalt arsenide, and iron oxide.

9. A method of making an active layer for an organic memory cell comprising:

forming an active layer using a spin on technique, the spin on technique comprising applying to a surface a mixture of i) from about 0.1% to about 75% by weight of at least one of a conjugated organic polymer, ii) from about 0.1% to about 20% by weight of a metal salt selected from the group consisting of copper salts, manganese salts, titanium salts, indium salts, gold salts, silver salts, iron salts, cobalt salts, nickel salts, palladium salts, platinum salts, zirconium salts, zinc salts, tungsten salts, molybdenum salts, and osmium salts, and iii) from about 25% to about 99.9% by weight of at least one solvent selected from the group consisting of glycol ether esters, glycol ethers, furans, and alkyl alcohols containing from about 4 to about 7 carbon atoms; and

contacting the active layer with hydrogen sulfide gas to permit hydrogen sulfide to react with the inorganic metal salt to form a metal sulfide.

10. The method of claim 9 , wherein the active layer is formed over a passive layer comprising a conductivity facilitating compound selected from the group consisting of copper sulfide, copper oxide, manganese oxide, titanium dioxide, indium oxide, silver sulfide, gold sulfide, nickel arsenide, cobalt arsenide, and iron oxide.

11. The method of claim 10 , wherein the conductivity facilitating compound comprises a metal that is the same as the metal of the metal salt.

12. The method of claim 11 , wherein the metal is copper.

13. The method of claim 9 , wherein the conjugated organic polymer comprises at least one selected from the group consisting of poly(p-phenylene vinylene); polyporphyrins; porphyrinic macrocycles, thiol-derivatized polyporphyrins; polymetallocenes such as polyferrocenes, polyphthalocyanines; polyvinylenes; polystiroles; polyacetylene; polydiphenylacetylene; poly(t-butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl)diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polyphenylacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-butyl)phenylacetylene; polynitro-phenylacetylene; poly(trifluoromethyl)phenylacetylene; poly(trimethylsilyl)pheylacetylene; polydipyrrylmethane; polyindoqiunone; polydihydroxyindole; polytrihydroxyindole; furane-polydihydroxyindole; polyindoqiunone-2-carboxyl; polyindoqiunone; polybenzobisthiazole; poly(p-phenylene sulfide); polyaniline; polyfluorene; polyphenylene and alkyl- or alkoxy-substituted derivates thereof; polythiophene and alkyl- or alkoxy-substituted derivates thereof; polypyrrole; polysilane; polystyrene; polyfuran; polyindole; polyazulene; polyphenylene; polyfluorenes, polypyridine; polybipyridine; polyphthalocyanine; polysexithiophene; poly(siliconoxohemiporphyrazine); poly(germaniumoxohemiporphyrazine); and poly(ethylenedioxythiophene).

14. A method of making an organic memory cell comprising:

providing a first electrode;

forming a passive layer comprising a conductivity facilitating compound over the first electrode;

forming an active layer over the passive layer using a spin-on technique, the spin-on technique comprising applying a mixture of i) from about 0.1% to about 75% by weight of an organic semiconductor material, ii) from about 0.1% to about 20% by weight of a copper salt, and iii) from about 25% to about 99.9% by weight of at least one solvent selected from the group consisting of glycol ether esters, glycol ethers, furans, and alkyl alcohols containing from about 4 to about 7 carbon atoms;

contacting the active layer with hydrogen sulfide gas to permit hydrogen sulfide to react with the copper salt to form copper sulfide; and

providing a second electrode over the active layer.

15. The method of claim 14 , wherein the solvent comprises at least one glycol ether selected from the group consisting of poly(ethylene glycol) methyl ether, poly(ethylene glycol) ethyl ether, poly(ethylene glycol) propyl ether, poly(ethylene glycol) butyl ether, poly(propylene glycol) methyl ether, poly(propylene glycol) ethyl ether, poly(propylene glycol) propyl ether, poly(propylene glycol) butyl ether, ethylene glycol methyl ether, ethylene glycol methylbutyl ether, ethylene glycol ethylbutyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, and propylene glycol dibutyl ether.

16. The method of claim 14 , wherein the solvent comprises at least one glycol ether ester selected from the group consisting of ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol propyl ether acetate, ethylene glycol butyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol butyl ether acetate, poly(ethylene glycol) methyl ether acetate, poly(ethylene glycol) ethyl ether acetate, poly(ethylene glycol) propyl ether acetate, poly(ethylene glycol) butyl ether acetate, poly(propylene glycol) methyl ether acetate, poly(propylene glycol) ethyl ether acetate, poly(propylene glycol) propyl ether acetate, and poly(propylene glycol) butyl ether acetate.

17. The method of claim 14 , wherein the solvent comprises at least one selected from the group consisting of tetrahydrofuran, n-butanol, iso-butanol, n-pentanol, iso-pentanol, cyclopentanol, n-hexanol, cyclohexanol, and heptanol.

18. The method of claim 14 , wherein the active layer comprises at least one conjugated organic polymer selected from the group consisting of poly(p-phenylene vinylene); polyporphyrins; porphyrinic macrocycles, thiol-derivatized polyporphyrins; polymetallocenes such as polyferrocenes, polyphthalocyanines; polyvinylenes; polystiroles; polyacetylene; polydiphenylacetylene; poly(t-butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl)diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polyphenylacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-butyl)phenylacetylene; polynitro-phenylacetylene; poly(trifluoromethyl)phenylacetylene; poly(trimethylsilyl)pheylacetylene; polydipyrrylmethane; polyindoqiunone; polydihydroxyindole; polytrihydroxyindole; furane-polydihydroxyindole; polyindoqiunone-2-carboxyl; polyindoqiunone; polybenzobisthiazole; poly(p-phenylene sulfide); polyaniline; polyfluorene; polyphenylene and alkyl- or alkoxy-substituted derivates thereof; polythiophene and alkyl- or alkoxy-substituted derivates thereof; polypyrrole; polysilane; polystyrene; polyfuran; polyindole; polyazulene; polyphenylene; polyfluorenes, polypyridine; polybipyridine; polyphthalocyanine; polysexithiophene; poly(siliconoxohemiporphyrazine); poly(germaniumoxohemiporphyrazine); and poly(ethylenedioxythiophene).

19. The method of claim 14 , wherein the conductivity facilitating compound comprises at least one selected from the group consisting of copper sulfide, copper oxide, manganese oxide, titanium dioxide, indium oxide, silver sulfide, gold sulfide, nickel arsenide, cobalt arsenide, and iron oxide.

20. The method of claim 14 , wherein the active layer is formed over a passive layer comprising copper sulfide.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Mar 16, 2022
From: MUFG UNION BANK, N.A.
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 059410/0438 →
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Oct 28, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MUFG UNION BANK, N.A.
Reel/Frame 050896/0366 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036037/0001 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →